Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
; Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China
In situ resistance evolution with pressure of anti-perovskite nitride Cu3N was measured using the diamond anvil cell (DAC) technique up to 20.0 GPa at room temperature. A sharp drop of resistance from 10(5) Omega at ambient pressure to several Omega was observed in the range 3.0-10.0 GPa. This is an indication of the pressure-induced metallization in the Cu3N semiconductor. Meanwhile we also performed the high-pressure energy dispersive X-ray diffraction experiments on Cu3N at the pressures up to 39.2 GPa. It was found that a crystal structure phase transition begins to take place at similar to 5.0 GPa on Cu3N, which is generally consistent with the electronic conductance results. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.