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Influence of RF power on the structure of ZnS thin films grown by sulfurizing RF sputter deposited ZnO
Zhang, RG; Wang BY(王宝义); Wei L(魏龙); Wang, BY; Wei, L
2008
发表期刊MATERIALS CHEMISTRY AND PHYSICS
卷号112期号:2页码:557-561
通讯作者[Zhang, Rengang] Wuhan Univ Sci & Technol, Dept Appl Phys, Wuhan 430081, Peoples R China ; [Wang, Baoyi ; Wei, Long] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
文章类型Article
摘要ZnS thin films with a c-axis preferred orientation have been prepared by sulfurizing the RF reactive sputter deposited ZnO thin films at 500 degrees C in sulfur vapor. These thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible transmission spectra and Auger electron spectroscopy (AES). It is found that the degree of c-axis Orientations of ZnO and ZnS thin films increases with enhancing RF power. Also, the sulfurized thin films have markedly greater grains than the as-deposited films, mainly due to recrystallization of ZnS in sulfur vapor. The grain size for the ZnS films increases from similar to 200 to similar to 500 nm with enhancing RF power from 80 to 120W. A reason for this is that in the case of the greater RF power, high compactness of the films will be very beneficial to the grain growth. Additionally, the excess sulfur can be absorbed on the grain surface of the ZnS film produced by 22 h sulfidation. This will cause the great broadening of absorption edge in the optical transmittance. (C) 2008 Elsevier B.V. All rights reserved.
关键词ZnS thin films Sputtering Sulfidation
学科领域Materials Science
研究领域[WOS]Materials Science ; Materials Science
DOI10.1016/j.matchemphys.2008.05.089
URL查看原文
语种英语
研究领域[WOS]Materials Science ; Materials Science
WOS类目Materials Science, Multidisciplinary
WOS记录号WOS:000261022200046
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/237935
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Zhang, RG,Wang BY,Wei L,et al. Influence of RF power on the structure of ZnS thin films grown by sulfurizing RF sputter deposited ZnO[J]. MATERIALS CHEMISTRY AND PHYSICS,2008,112(2):557-561.
APA Zhang, RG,王宝义,魏龙,Wang, BY,&Wei, L.(2008).Influence of RF power on the structure of ZnS thin films grown by sulfurizing RF sputter deposited ZnO.MATERIALS CHEMISTRY AND PHYSICS,112(2),557-561.
MLA Zhang, RG,et al."Influence of RF power on the structure of ZnS thin films grown by sulfurizing RF sputter deposited ZnO".MATERIALS CHEMISTRY AND PHYSICS 112.2(2008):557-561.
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