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The transition from Eu3+ to Eu2+ in SiO2(Eu) thin films prepared by ion implantation and co-sputtering
Alternative Title共溅射和离子注入制备的SiO2( Eu) 薄膜中Eu3+ 到Eu2+ 的转变
Liu, FZ; Zhu, MF; Liu T(刘涛); Liu, T; Li, BC
2001
Source PublicationACTA PHYSICA SINICA
Volume50Issue:3Pages:532-535
Corresponding AuthorUniv Sci & Technol China, State Key Lab Mat Chem & Applicat, Dept Phys, Grad Sch, Beijing 100039, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100039, Peoples R China ; Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
SubtypeArticle
AbstractEu ions doped SiO2 thin films, SiO2( Eu), were prepared by co-sputtering of SiO2 and Eu2O3 and Eu ion implantation into thermally grown SiO2 films. The Eu-L-3-edge X-ray absorption near edge structure (XANES) spectra of SiO2(Eu) films show a doublet absorption peak structure with energy difference of 7 eV, which indicates the conversion of Eu3+ to Eu2+ at high annealing temperature in N-2. The strong blue luminescence of SiO2(Eu) films prepared by ions implantation after films annealed above 1100 degreesC confirms the above argument.
KeywordSiO2(Eu) films XANES
Subject AreaPhysics
URL查看原文
Language英语
WOS Research AreaPhysics
WOS SubjectPhysics, Multidisciplinary
WOS IDWOS:000167572500032
Citation statistics
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/237849
Collection多学科研究中心
Affiliation中国科学院高能物理研究所
First Author AffilicationInstitute of High Energy
Recommended Citation
GB/T 7714
Liu, FZ,Zhu, MF,Liu T,et al. The transition from Eu3+ to Eu2+ in SiO2(Eu) thin films prepared by ion implantation and co-sputtering[J]. ACTA PHYSICA SINICA,2001,50(3):532-535.
APA Liu, FZ,Zhu, MF,刘涛,Liu, T,&Li, BC.(2001).The transition from Eu3+ to Eu2+ in SiO2(Eu) thin films prepared by ion implantation and co-sputtering.ACTA PHYSICA SINICA,50(3),532-535.
MLA Liu, FZ,et al."The transition from Eu3+ to Eu2+ in SiO2(Eu) thin films prepared by ion implantation and co-sputtering".ACTA PHYSICA SINICA 50.3(2001):532-535.
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