| XANES study on the valence transitions in cerium oxide nanoparticles |
| Zhang J(张静); Wu ZY(吴自玉) ; Liu T(刘涛); Hu TD(胡天斗) ; Wu ZH(吴忠华) ; Ju X(巨新); Zhang, J; Wu, ZY; Liu, T; Hu, TD; Wu, ZH; Ju, X
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| 2001
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发表期刊 | JOURNAL OF SYNCHROTRON RADIATION
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卷号 | 8期号:2页码:531-532 |
通讯作者 | Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100039, Peoples R China
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文章类型 | Article; Proceedings Paper
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摘要 | The aim of this work is the determination of Ce environment and valence state in Cerium oxide nanoparticles prepared by the microemulsion method. X-ray absorption near-edge structure measurements at Ce L-3 edge were performed on the nanoparticles as a function of annealing temperature, ranging from 298K to 873K under air condition. The experimental results support the conclusion that Ce ion, in the investigated systems, is in trivalence state when the annealing temperature is below 473K. As the temperature increases up to 623K, the XANES spectrum shows the coexistence of Ce3+ and Ce4+ states. When the temperature is higher than 623K, the spectra become identical to that of CeO2 with a distinct double-peak structure, corresponding to the Ce4+ state. |
关键词 | cerium oxide nanoparticles
valence transitions
XANES
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学科领域 | Instruments & Instrumentation; Optics; Physics
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DOI | 10.1107/S0909049500016022
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URL | 查看原文
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语种 | 英语
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WOS研究方向 | Instruments & Instrumentation
; Optics
; Physics
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WOS类目 | Instruments & Instrumentation
; Optics
; Physics, Applied
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WOS记录号 | WOS:000167298100146
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引用统计 |
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文献类型 | 期刊论文
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条目标识符 | http://ir.ihep.ac.cn/handle/311005/237846
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专题 | 多学科研究中心
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作者单位 | 中国科学院高能物理研究所
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推荐引用方式 GB/T 7714 |
Zhang J,Wu ZY,Liu T,et al. XANES study on the valence transitions in cerium oxide nanoparticles[J]. JOURNAL OF SYNCHROTRON RADIATION,2001,8(2):531-532.
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APA |
张静.,吴自玉.,刘涛.,胡天斗.,吴忠华.,...&Ju, X.(2001).XANES study on the valence transitions in cerium oxide nanoparticles.JOURNAL OF SYNCHROTRON RADIATION,8(2),531-532.
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MLA |
张静,et al."XANES study on the valence transitions in cerium oxide nanoparticles".JOURNAL OF SYNCHROTRON RADIATION 8.2(2001):531-532.
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