Total reflection X-ray fluorescence (TXRF) is used for non-destructive determination of depth profiling. A numerical processing is presented as impurity quantification in the continuum excitation TXRF without using standards. Dependences of concentration of impurities on depths ranging from a few tens to thousands Angstroms are given for Fe and Cu on Si-wafer. The detection limits are in the range of 10(10) atoms/cm2. The method was checked with Secondary Ion Mass Spectrometry (SIMS) and the agreement is reasonably good.
Fan QM,Liu YW,LI, DL,et al. DETERMINATION OF DEPTH PROFILING OF METAL TRACE IMPURITIES ON SI SURFACE USING TOTAL REFLECTION X-RAY-FLUORESCENCE[J]. FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY,1993,345(7):518-520.
范钦敏.,刘亚雯.,LI, DL.,魏诚林.,FAN, QM.,...&WEI, CL.(1993).DETERMINATION OF DEPTH PROFILING OF METAL TRACE IMPURITIES ON SI SURFACE USING TOTAL REFLECTION X-RAY-FLUORESCENCE.FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY,345(7),518-520.
范钦敏,et al."DETERMINATION OF DEPTH PROFILING OF METAL TRACE IMPURITIES ON SI SURFACE USING TOTAL REFLECTION X-RAY-FLUORESCENCE".FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY 345.7(1993):518-520.