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Annealing effect on magnetoresistance in NiO-Co-Cu based spin valves
Zhang, AM; Wu, XS; Sun, L; Wang, YX; Lu, M; Hu, A; Jiang, SS; Chen, ZJ; Chen, X; Sun, MH; Wu, ZH; Chen ZJ(陈中军); Chen X(陈曦); Sun MH(孙民华); Wu ZH(吴忠华)
2005
Source PublicationAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume81Issue:3Pages:501-505
Corresponding AuthorNanjing Univ, Dept Phys, Solid State Microstruct Lab, Nanjing 210093, Peoples R China ; Sci Acad China, BSRF, Inst High Energy Phys, Beijing 100039, Peoples R China
SubtypeArticle
AbstractWe have fabricated two sets of NiO-Co-Cu based spin valves by the magnetosputtering technique with different deposition parameters. Magnetoresistance (MR) measurements show that the MR value for the NiO layer under the bottom of Co/Cu/Co spin valve (BSV) is larger than that for the NiO layer at the top of Co/Cu/Co (TSV). The MR value of BSV decreases with increasing annealing temperature in air or in vacuum, which disappears at the blocking temperature of NiO, i.e., about 250 degrees C. There is maximum MR value for TSV annealing at a temperature range from room temperature to 350 degrees C. The different thermal behavior for BSV and TSV is explained by the competition between the interface roughness of NiO/Co, which was determined by the grazing incident X-ray reflectivity and X-ray diffuse scattering, and the coupling effect between Co layer and NiO layer.
Subject AreaMaterials Science; Physics
DOI10.1007/s00339-004-3057-4
URL查看原文
Indexed ByADS
Language英语
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000232116100011
ADS Bibcode2005ApPhA..81..501Z
ADS URLhttps://ui.adsabs.harvard.edu/abs/2005ApPhA..81..501Z
ADS CITATIONShttps://ui.adsabs.harvard.edu/abs/2005ApPhA..81..501Z/citations
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Cited Times:4 [ADS]
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/237733
Collection多学科研究中心
实验物理中心
粒子天体物理中心
Affiliation中国科学院高能物理研究所
First Author AffilicationInstitute of High Energy
Recommended Citation
GB/T 7714
Zhang, AM,Wu, XS,Sun, L,et al. Annealing effect on magnetoresistance in NiO-Co-Cu based spin valves[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2005,81(3):501-505.
APA Zhang, AM.,Wu, XS.,Sun, L.,Wang, YX.,Lu, M.,...&吴忠华.(2005).Annealing effect on magnetoresistance in NiO-Co-Cu based spin valves.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,81(3),501-505.
MLA Zhang, AM,et al."Annealing effect on magnetoresistance in NiO-Co-Cu based spin valves".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 81.3(2005):501-505.
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