Annealing effect on magnetoresistance in NiO-Co-Cu based spin valves
Zhang, AM; Wu, XS; Sun, L; Wang, YX; Lu, M; Hu, A; Jiang, SS; Chen, ZJ; Chen, X; Sun, MH; Wu, ZH; Chen ZJ(陈中军); Chen X(陈曦); Sun MH(孙民华); Wu ZH(吴忠华)
刊名APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
2005
卷号81期号:3页码:501-505
学科分类Materials Science; Physics
DOI10.1007/s00339-004-3057-4
通讯作者Nanjing Univ, Dept Phys, Solid State Microstruct Lab, Nanjing 210093, Peoples R China ; Sci Acad China, BSRF, Inst High Energy Phys, Beijing 100039, Peoples R China
文章类型Article
英文摘要We have fabricated two sets of NiO-Co-Cu based spin valves by the magnetosputtering technique with different deposition parameters. Magnetoresistance (MR) measurements show that the MR value for the NiO layer under the bottom of Co/Cu/Co spin valve (BSV) is larger than that for the NiO layer at the top of Co/Cu/Co (TSV). The MR value of BSV decreases with increasing annealing temperature in air or in vacuum, which disappears at the blocking temperature of NiO, i.e., about 250 degrees C. There is maximum MR value for TSV annealing at a temperature range from room temperature to 350 degrees C. The different thermal behavior for BSV and TSV is explained by the competition between the interface roughness of NiO/Co, which was determined by the grazing incident X-ray reflectivity and X-ray diffuse scattering, and the coupling effect between Co layer and NiO layer.
类目[WOS]Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]Materials Science ; Physics
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语种英语
WOS记录号WOS:000232116100011
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被引频次:4[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/237733
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
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Zhang, AM,Wu, XS,Sun, L,et al. Annealing effect on magnetoresistance in NiO-Co-Cu based spin valves[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2005,81(3):501-505.
APA Zhang, AM.,Wu, XS.,Sun, L.,Wang, YX.,Lu, M.,...&吴忠华.(2005).Annealing effect on magnetoresistance in NiO-Co-Cu based spin valves.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,81(3),501-505.
MLA Zhang, AM,et al."Annealing effect on magnetoresistance in NiO-Co-Cu based spin valves".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 81.3(2005):501-505.
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