MS-XANES studies on the interface effect of semiconductor InSb nanoparticles embedded in a-SiO2 matrix
Chen DL(陈栋梁); Wu ZY(吴自玉); Chen, DL; Wu, ZY; Wei, SQ
刊名HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
2006
卷号30期号:5页码:476-480
关键词InSb nanoparticle interface effect MS-XANES
学科分类Physics
其他题名孤立分散在SiO2基质中的半导体InSb纳米颗粒界面效应的MS-XANES研究
通讯作者Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China ; Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China
文章类型Article
英文摘要The interface effect of semiconductor InSb nanoparticles (NPs) embedded in a-SiO2 matrix was investigated via multi-scattering XANES simulations. The results show that the white line increase and broadening to higher energies of InSb NPs embedded in a-SiO2 host matrix are mainly due to the interaction of InSb NPs and a-SiO2 matrix. It can be interpreted as both a local single-site effect on mu(0)(E) due to the effect of a-SiO2 matrix on Sb intra-atomic potential and the increase in 5p-hole population due to 5p-electron depletion in Sb for the InSb NPs embedded in SiO2 matrix. On the other hand, our result reveals evidently that it is not reasonable to estimate the 5p-hole counts only according to the intensity of the white line due to the interface effect of nanoparticles.
类目[WOS]Physics, Nuclear ; Physics, Particles & Fields
研究领域[WOS]Physics
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语种英语
WOS记录号WOS:000237326500020
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/237643
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
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GB/T 7714
Chen DL,Wu ZY,Chen, DL,et al. MS-XANES studies on the interface effect of semiconductor InSb nanoparticles embedded in a-SiO2 matrix[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2006,30(5):476-480.
APA 陈栋梁,吴自玉,Chen, DL,Wu, ZY,&Wei, SQ.(2006).MS-XANES studies on the interface effect of semiconductor InSb nanoparticles embedded in a-SiO2 matrix.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,30(5),476-480.
MLA 陈栋梁,et al."MS-XANES studies on the interface effect of semiconductor InSb nanoparticles embedded in a-SiO2 matrix".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 30.5(2006):476-480.
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