Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
; Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China
The interface effect of semiconductor InSb nanoparticles (NPs) embedded in a-SiO2 matrix was investigated via multi-scattering XANES simulations. The results show that the white line increase and broadening to higher energies of InSb NPs embedded in a-SiO2 host matrix are mainly due to the interaction of InSb NPs and a-SiO2 matrix. It can be interpreted as both a local single-site effect on mu(0)(E) due to the effect of a-SiO2 matrix on Sb intra-atomic potential and the increase in 5p-hole population due to 5p-electron depletion in Sb for the InSb NPs embedded in SiO2 matrix. On the other hand, our result reveals evidently that it is not reasonable to estimate the 5p-hole counts only according to the intensity of the white line due to the interface effect of nanoparticles.
Chen DL,Wu ZY,Chen, DL,et al. MS-XANES studies on the interface effect of semiconductor InSb nanoparticles embedded in a-SiO2 matrix[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2006,30(5):476-480.
陈栋梁,吴自玉,Chen, DL,Wu, ZY,&Wei, SQ.(2006).MS-XANES studies on the interface effect of semiconductor InSb nanoparticles embedded in a-SiO2 matrix.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,30(5),476-480.
陈栋梁,et al."MS-XANES studies on the interface effect of semiconductor InSb nanoparticles embedded in a-SiO2 matrix".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 30.5(2006):476-480.