An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells
Zhao, DG; Jiang, DS; Zhu, JJ; Wang, H; Liu, ZS; Zhang, SM; Wang, YT; Jia, QJ; Yang, H; Jia QJ(贾全杰)
刊名JOURNAL OF ALLOYS AND COMPOUNDS
2010
卷号489期号:2页码:461-464
关键词Nitride materials Crystal growth X-ray diffraction
学科分类Chemistry; Materials Science; Metallurgy & Metallurgical Engineering
DOI10.1016/j.jallcom.2009.09.086
通讯作者[Zhao, D. G. ; Jiang, D. S. ; Zhu, J. J. ; Wang, H. ; Liu, Z. S. ; Zhang, S. M. ; Wang, Y. T. ; Yang, Hui] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China ; [Jia, Q. J.] Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100039, Peoples R China ; [Yang, Hui] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China
文章类型Article
英文摘要The influence of well thickness on the electroluminescence (EL) of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition is investigated. It is found that the peak wavelength of EL increases with the increase of well thickness when the latter is located in the range of 3.0-5.1 nm. The redshift is mainly attributed to the quantum confined Stark effect (QCSE). As a contrast, it is found that the EL intensity of InGaN/GaN MQWs increases with the increase of well thickness in spite of QCSE. The result of X-ray diffraction demonstrates that the interface become smoother with the increase of well thickness and suggests that the reduced interface roughness can be an important factor leading to the increase of EL intensity of InGaN/GaN MQWs. (C) 2009 Elsevier B.V. All rights reserved.
类目[WOS]Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
研究领域[WOS]Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
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语种英语
WOS记录号WOS:000273251000030
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被引频次:16[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/237576
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
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Zhao, DG,Jiang, DS,Zhu, JJ,et al. An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2010,489(2):461-464.
APA Zhao, DG.,Jiang, DS.,Zhu, JJ.,Wang, H.,Liu, ZS.,...&贾全杰.(2010).An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells.JOURNAL OF ALLOYS AND COMPOUNDS,489(2),461-464.
MLA Zhao, DG,et al."An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells".JOURNAL OF ALLOYS AND COMPOUNDS 489.2(2010):461-464.
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