| Development of bulk SiC single crystal grown by physical vapor transport method |
| Han, RJ; Xu, XG; Hu, XB; Yu, NS; Wang, JY ; Tian, YL; Huang, WX; Tian YL(田玉莲); Huang WX(黄万霞)
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| 2003
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| 发表期刊 | OPTICAL MATERIALS
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| 卷号 | 23期号:1-2页码:415-420 |
| 通讯作者 | Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
; Inst High Energy Phys, Beijing Synchrotron Radiat Lab, Beijing 100039, Peoples R China
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| 文章类型 | Article; Proceedings Paper
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| 摘要 | This paper reviews the development of bulk SiC single crystals grown by physical vapor transport method, including the polytype control, defects and doped consideration. In addition, defects in commercial 6H-SiC wafer, such as micropipes, hexagonal voids and subgrain boundaries, are examined by transmission optical microscopy, X-ray synchrotron topography in back-reflection geometry and high-resolution X-ray diffraction methods. (C) 2003 Elsevier Science B.V. All rights reserved. |
| 关键词 | SiC
crystal growth
semiconductor
defect
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| 学科领域 | Materials Science; Optics
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| DOI | 10.1016/S0925-3467(02)00330-0
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| URL | 查看原文
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| 语种 | 英语
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| WOS研究方向 | Materials Science
; Optics
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| WOS类目 | Materials Science, Multidisciplinary
; Optics
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| WOS记录号 | WOS:000183919200077
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| 引用统计 |
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| 文献类型 | 期刊论文
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| 条目标识符 | http://ir.ihep.ac.cn/handle/311005/237383
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| 专题 | 多学科研究中心
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| 作者单位 | 中国科学院高能物理研究所
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推荐引用方式
GB/T 7714 |
Han, RJ,Xu, XG,Hu, XB,et al. Development of bulk SiC single crystal grown by physical vapor transport method[J]. OPTICAL MATERIALS,2003,23(1-2):415-420.
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| APA |
Han, RJ.,Xu, XG.,Hu, XB.,Yu, NS.,Wang, JY.,...&黄万霞.(2003).Development of bulk SiC single crystal grown by physical vapor transport method.OPTICAL MATERIALS,23(1-2),415-420.
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| MLA |
Han, RJ,et al."Development of bulk SiC single crystal grown by physical vapor transport method".OPTICAL MATERIALS 23.1-2(2003):415-420.
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