Development of X-type DEPFET macropixel detectors | |
Zhang, C![]() ![]() ![]() | |
2008 | |
Source Publication | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
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Volume | 588Issue:3Pages:389-396 |
Corresponding Author | [Zhang, Chen] Tsinghua Univ, Dept Engn Phys, Beijing 100084, Peoples R China ; [Zhang, Chen ; Treis, Johannes ; Woelfel, Stefan ; Strueder, Lothar] Max Planck Inst Extraterr Phys, D-85741 Garching, Germany ; [Lutz, Gerhard] Max Planck Inst Phys & Astrophys, D-80805 Munich, Germany ; [Zhang, Chen ; Lechner, Peter ; Lutz, Gerhard ; Treis, Johannes ; Woelfel, Stefan ; Strueder, Lothar] Max Planck Inst Halbleiterlabor, D-81739 Munich, Germany ; [Lechner, Peter] PNSensor GmbH, D-80803 Munich, Germany ; [Zhang, Chen ; Zhang, Shuang Nan] Tsinghua Univ, Tsinghua Ctr Astrophys, Beijing 100084, Peoples R China ; [Zhang, Shuang Nan] Chinese Acad Sci, Inst High Energy Phys, Key Lab Particle Astrophys, Beijing 100039, Peoples R China |
Subtype | Article |
Abstract | The Depleted P-channel Field Effect Transistor (DEPFET) Macropixel detectors based on the combined detector/amplifier structure have been designed for X-ray spectroscopy applications at the Max-Planck Institute (MPI) Semiconductor Laboratory. Prototypes with several design variants have been fabricated. The outstanding performance of these devices has been previously demonstrated. In this paper, the development of an improved variant is presented, which applies the so-called X-type DEPFET originally designed for XEUS mission as the readout element of a silicon drift detector. The measured energy resolution for Mn-K-alpha line at -30 degrees C is 122 eV with a pixel size of 1 x 1 mm(2). The excellent peak/background ratio of the spectra is observed with a collimated Fe-55 source at - 30 degrees C. The integral nonlinearity is less than 0.2% up to 160keV measured with laser charge injection. Homogeneity is also studied with the laser on a computer controlled X-Y stage. (C) 2008 Elsevier B.V. All rights reserved. |
Keyword | DEPFET macropixel silicon drift detector X-ray astronomy x-ray spectroscopy |
Subject Area | Instruments & Instrumentation; Nuclear Science & Technology; Physics; Spectroscopy |
DOI | 10.1016/j.nima.2008.02.002 |
URL | 查看原文 |
Indexed By | ADS |
Language | 英语 |
WOS Research Area | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics ; Spectroscopy |
WOS Subject | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics, Particles & Fields ; Spectroscopy |
WOS ID | WOS:000255558200013 |
ADS Bibcode | 2008NIMPA.588..389Z |
ADS URL | https://ui.adsabs.harvard.edu/abs/2008NIMPA.588..389Z |
ADS CITATIONS | https://ui.adsabs.harvard.edu/abs/2008NIMPA.588..389Z/citations |
Citation statistics |
Cited Times:3 [ADS]
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Document Type | 期刊论文 |
Identifier | http://ir.ihep.ac.cn/handle/311005/237283 |
Collection | 粒子天体物理中心 加速器中心 |
Affiliation | 中国科学院高能物理研究所 |
First Author Affilication | Institute of High Energy |
Recommended Citation GB/T 7714 | Zhang, C,Lechner, P,Lutz, G,et al. Development of X-type DEPFET macropixel detectors[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,2008,588(3):389-396. |
APA | Zhang, C.,Lechner, P.,Lutz, G.,Treis, J.,Wolfel, S.,...&张双南.(2008).Development of X-type DEPFET macropixel detectors.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,588(3),389-396. |
MLA | Zhang, C,et al."Development of X-type DEPFET macropixel detectors".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 588.3(2008):389-396. |
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