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Development of X-type DEPFET macropixel detectors
Zhang, C; Lechner, P; Lutz, G; Treis, J; Wolfel, S; Struder, L; Zhang, SN; Zhang SN(张双南)
2008
发表期刊NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
卷号588期号:3页码:389-396
通讯作者[Zhang, Chen] Tsinghua Univ, Dept Engn Phys, Beijing 100084, Peoples R China ; [Zhang, Chen ; Treis, Johannes ; Woelfel, Stefan ; Strueder, Lothar] Max Planck Inst Extraterr Phys, D-85741 Garching, Germany ; [Lutz, Gerhard] Max Planck Inst Phys & Astrophys, D-80805 Munich, Germany ; [Zhang, Chen ; Lechner, Peter ; Lutz, Gerhard ; Treis, Johannes ; Woelfel, Stefan ; Strueder, Lothar] Max Planck Inst Halbleiterlabor, D-81739 Munich, Germany ; [Lechner, Peter] PNSensor GmbH, D-80803 Munich, Germany ; [Zhang, Chen ; Zhang, Shuang Nan] Tsinghua Univ, Tsinghua Ctr Astrophys, Beijing 100084, Peoples R China ; [Zhang, Shuang Nan] Chinese Acad Sci, Inst High Energy Phys, Key Lab Particle Astrophys, Beijing 100039, Peoples R China
摘要The Depleted P-channel Field Effect Transistor (DEPFET) Macropixel detectors based on the combined detector/amplifier structure have been designed for X-ray spectroscopy applications at the Max-Planck Institute (MPI) Semiconductor Laboratory. Prototypes with several design variants have been fabricated. The outstanding performance of these devices has been previously demonstrated. In this paper, the development of an improved variant is presented, which applies the so-called X-type DEPFET originally designed for XEUS mission as the readout element of a silicon drift detector. The measured energy resolution for Mn-K-alpha line at -30 degrees C is 122 eV with a pixel size of 1 x 1 mm(2). The excellent peak/background ratio of the spectra is observed with a collimated Fe-55 source at - 30 degrees C. The integral nonlinearity is less than 0.2% up to 160keV measured with laser charge injection. Homogeneity is also studied with the laser on a computer controlled X-Y stage. (C) 2008 Elsevier B.V. All rights reserved.
文章类型Article
关键词DEPFET macropixel silicon drift detector X-ray astronomy x-ray spectroscopy
学科领域Instruments & Instrumentation; Nuclear Science & Technology; Physics; Spectroscopy
研究领域[WOS]Instruments & Instrumentation ; Nuclear Science & Technology ; Physics ; Spectroscopy
DOI10.1016/j.nima.2008.02.002
URL查看原文
语种英语
WOS类目Instruments & Instrumentation ; Nuclear Science & Technology ; Physics, Particles & Fields ; Spectroscopy
WOS记录号WOS:000255558200013
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被引频次:5[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/237283
专题粒子天体物理中心
作者单位中国科学院高能物理研究所
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Zhang, C,Lechner, P,Lutz, G,et al. Development of X-type DEPFET macropixel detectors[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,2008,588(3):389-396.
APA Zhang, C.,Lechner, P.,Lutz, G.,Treis, J.,Wolfel, S.,...&张双南.(2008).Development of X-type DEPFET macropixel detectors.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,588(3),389-396.
MLA Zhang, C,et al."Development of X-type DEPFET macropixel detectors".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 588.3(2008):389-396.
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