Defects and electric property characterization of multi-electrode Hg1-xCdxTe Hall devices
Cai, Y; Zheng, GZ; Zhu, XC; Jiang, JH; Guo, SL; Tang, DY; Jiang JH(蒋建华)
刊名NARROW GAP SEMICONDUCTORS 1995
1995
期号144页码:369-373
学科分类Materials Science; Physics
通讯作者KUNMING INST PHYS,KUNMING 650223,PEOPLES R CHINA ; CHINESE ACAD SCI,INST HIGH ENERGY PHYS,SYNCHROTRON RADIAT NATL LAB,BEIJING 100039,PEOPLES R CHINA
文章类型Article; Proceedings Paper
英文摘要For fabricating Hg1-xCdxTe detectors effectively, an understanding of the defect behavior in Hg1-xCdxTe materials and devices is important. A multielectrode Hg1-xCdxTe Hall device was specially prepared for investigating both material properties and detector performance, on which the synchrotron radiation Lane transmission topographs were taken for observation of lattice defects, the temperature dependent Hall effect, photoconductive decay and photocurrent spectra were measured for studying device. The results show that there exist many defects in the Hall device that include lattice strain, dislocation and substructure, etc.. These defects increase the concentration and decrease the carrier lifetime and cause abnormal photoconductive behavior, thus the detectivity of the Hall device as a detector is lowered.
类目[WOS]Materials Science, Characterization & Testing ; Physics, Condensed Matter
研究领域[WOS]Materials Science ; Physics
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语种英语
WOS记录号WOS:A1995BE39F00072
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/237198
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
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Cai, Y,Zheng, GZ,Zhu, XC,et al. Defects and electric property characterization of multi-electrode Hg1-xCdxTe Hall devices[J]. NARROW GAP SEMICONDUCTORS 1995,1995(144):369-373.
APA Cai, Y.,Zheng, GZ.,Zhu, XC.,Jiang, JH.,Guo, SL.,...&蒋建华.(1995).Defects and electric property characterization of multi-electrode Hg1-xCdxTe Hall devices.NARROW GAP SEMICONDUCTORS 1995(144),369-373.
MLA Cai, Y,et al."Defects and electric property characterization of multi-electrode Hg1-xCdxTe Hall devices".NARROW GAP SEMICONDUCTORS 1995 .144(1995):369-373.
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