KUNMING INST PHYS,KUNMING 650223,PEOPLES R CHINA
; CHINESE ACAD SCI,INST HIGH ENERGY PHYS,SYNCHROTRON RADIAT NATL LAB,BEIJING 100039,PEOPLES R CHINA
Article; Proceedings Paper
For fabricating Hg1-xCdxTe detectors effectively, an understanding of the defect behavior in Hg1-xCdxTe materials and devices is important. A multielectrode Hg1-xCdxTe Hall device was specially prepared for investigating both material properties and detector performance, on which the synchrotron radiation Lane transmission topographs were taken for observation of lattice defects, the temperature dependent Hall effect, photoconductive decay and photocurrent spectra were measured for studying device. The results show that there exist many defects in the Hall device that include lattice strain, dislocation and substructure, etc.. These defects increase the concentration and decrease the carrier lifetime and cause abnormal photoconductive behavior, thus the detectivity of the Hall device as a detector is lowered.