Stacking faults in semi-polar 6H-SiC single crystals
Gao, YQ; Hu, XB; Xu, XG; Chen, XF; Peng, Y; Song, S; Jiang, MH; Huang, WX; Huang WX(黄万霞)
刊名CRYSTAL RESEARCH AND TECHNOLOGY
2011
卷号46期号:4页码:357-360
关键词stacking fault semi-polar sublimation SiC
学科分类Crystallography
DOI10.1002/crat.201000643
通讯作者[Gao, Y. Q. ; Hu, X. B. ; Xu, X. G. ; Chen, X. F. ; Peng, Y. ; Song, S. ; Jiang, M. H.] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China ; [Huang, W. X.] Inst High Energy Phys, Beijing Synchrotron Radiat Lab, Beijing 100039, Peoples R China
文章类型Article
英文摘要6H-SiC single crystals have been successfully grown on (10 (1) over bar5) plane seed by sublimation method. High density stacking faults (SFs) were observed by transmission synchrotron radiation X-ray topography. Based on the invisibility criteria of stacking faults, the displacement vectors of most SFs were determined to be the type of 1/6[11 (2) over bar0]. Laser scanning confocal microscopy (LSCM) was used to observe the etching morphology of (01 (1) over bar5) wafer. The etching steps of SFs were found and their density decreased from 3.6x10(3) cm(-1) to 2.0x10(2) cm(-1) along the <0001> projection direction. The inclination angles of the SFs etching step plane to (10 (1) over bar5) plane were measured by line scanning of LSCM. It was found that the inclination angles decreased from 20 degrees to 10 degrees along the < 0001 > projection direction. Different etching characteristics of SFs along radial direction of 6H-SiC (10 (1) over bar5) wafer should be attributed to different displacement vectors and different stacking fault energies for these stacking faults. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
类目[WOS]Crystallography
研究领域[WOS]Crystallography
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语种英语
WOS记录号WOS:000289532500006
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/237135
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
中国科学院高能物理研究所_多学科研究中心
作者单位中国科学院高能物理研究所
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Gao, YQ,Hu, XB,Xu, XG,et al. Stacking faults in semi-polar 6H-SiC single crystals[J]. CRYSTAL RESEARCH AND TECHNOLOGY,2011,46(4):357-360.
APA Gao, YQ.,Hu, XB.,Xu, XG.,Chen, XF.,Peng, Y.,...&黄万霞.(2011).Stacking faults in semi-polar 6H-SiC single crystals.CRYSTAL RESEARCH AND TECHNOLOGY,46(4),357-360.
MLA Gao, YQ,et al."Stacking faults in semi-polar 6H-SiC single crystals".CRYSTAL RESEARCH AND TECHNOLOGY 46.4(2011):357-360.
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