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Growth and characterization of LiGaO2 substrate crystal for GaN epitaxy
Xu, K; Deng, PZ; Xu, J; Zhou, GQ; Liu, WJ; Tian, YL; Tian YL(田玉莲)
2000
发表期刊JOURNAL OF CRYSTAL GROWTH
卷号216期号:1-4页码:343-347
通讯作者Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China ; Nanjing Univ, Natl Key Lab Solid State Struct & Phys, Nanjing 210008, Peoples R China ; Chinese Acad Sci, Beijing Inst High Energy Phys, Beijing, Peoples R China
文章类型Article
摘要We report Czochralski growth of LiGaO2 single crystals, which are promising substrate materials for the epitaxy of GaN since the lattice mismatch between LiGaO2 and GaN is only 0.9%. The dislocation etching pits morphologies and distribution characteristics were well revealed by chemical etching technique. Transmission electron microscopy (TEM) observations showed that gamma-Ga2O3 inclusions tended to emerge in LiGaO2 crystals owing to the volatilization of Li2O during growth process. Therefore, many edged dislocations were induced, which usually lie on (001) plane. The amount of gamma-Ga2O3 inclusions is closely related to growth parameters. X-ray topography shows that an interface parallel to (001) tends to form in the LiGaO2 crystals pulled along (100). The two parts aside the (001) interface were slightly rotated around the interface normal. The crystal quality can be improved by using starting materials with excess of Li2CO3 and adopting appropriate growth parameters. (C) 2000 Elsevier Science B.V. All rights reserved.
关键词crystal growth LiGaO2 GaN substrate defect
学科领域Crystallography; Materials Science; Physics
研究领域[WOS]Crystallography ; Materials Science ; Physics ; Crystallography ; Materials Science ; Physics
DOI10.1016/S0022-0248(00)00417-6
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语种英语
研究领域[WOS]Crystallography ; Materials Science ; Physics ; Crystallography ; Materials Science ; Physics
WOS类目Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号WOS:000088286000047
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被引频次:12[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/237069
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Xu, K,Deng, PZ,Xu, J,et al. Growth and characterization of LiGaO2 substrate crystal for GaN epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2000,216(1-4):343-347.
APA Xu, K.,Deng, PZ.,Xu, J.,Zhou, GQ.,Liu, WJ.,...&田玉莲.(2000).Growth and characterization of LiGaO2 substrate crystal for GaN epitaxy.JOURNAL OF CRYSTAL GROWTH,216(1-4),343-347.
MLA Xu, K,et al."Growth and characterization of LiGaO2 substrate crystal for GaN epitaxy".JOURNAL OF CRYSTAL GROWTH 216.1-4(2000):343-347.
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