Influence of sulfidation ambience on the properties of nanocrystalline ZnS films prepared by sulfurizing the as-sputtered ZnO films
Zhang RG(张仁刚); Wang BY(王宝义); Zhang H(张慧); Wei L(魏龙); Zhang, RG; Wang, BY; Zhang, H; Wei, L
刊名APPLIED SURFACE SCIENCE
2005
卷号245期号:1-4页码:340-345
关键词ZnS films ZnO films sulfidation
学科分类Chemistry; Materials Science; Physics
DOI10.1016/j.apsusc.2004.10.029
通讯作者Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100039, Peoples R China
文章类型Article
英文摘要Nanocrystalline ZnS films have been prepared on glass and quartz substrates by sulfurizing the as-sputtered ZnO films at 500 ° C in H2S or sulfur-vapor. The films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive analysis of X-ray (EDX) and UV-visible transmission spectra. It is found that the total conversion of ZnO films in sulfur-vapor to the hexagonal ZnS films requires 11 h much longer than that in H2S, due to the low S content in sulfur-vapor. And the high ZnS (0 0 2) preferred orientation can be observed for ZnS films formed in H2S or low pressure sulfur-vapor. The results also show that ZnS films formed in sulfur-vapor have about 200 nm grains greater than those formed in H2S, because the solid-phase recrystallization during the sulfidation process is favorable in sulfur-vapor. Besides, the great broadening of the absorption edge in the optical transmission spectra, and the small band-gap energies compared to that of ZnS films formed in H2S, are obtained for ZnS films produced in sulfur-vapor, which can arise from existence of some ZnO and residual sulfur phase, and sulfur interstitial atoms in the films. © 2004 Elsevier B.V. All rights reserved.
类目[WOS]Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
研究领域[WOS]Chemistry ; Materials Science ; Physics
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语种英语
WOS记录号WOS:000228904900046
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被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/237057
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
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Zhang RG,Wang BY,Zhang H,et al. Influence of sulfidation ambience on the properties of nanocrystalline ZnS films prepared by sulfurizing the as-sputtered ZnO films[J]. APPLIED SURFACE SCIENCE,2005,245(1-4):340-345.
APA 张仁刚.,王宝义.,张慧.,魏龙.,Zhang, RG.,...&Wei, L.(2005).Influence of sulfidation ambience on the properties of nanocrystalline ZnS films prepared by sulfurizing the as-sputtered ZnO films.APPLIED SURFACE SCIENCE,245(1-4),340-345.
MLA 张仁刚,et al."Influence of sulfidation ambience on the properties of nanocrystalline ZnS films prepared by sulfurizing the as-sputtered ZnO films".APPLIED SURFACE SCIENCE 245.1-4(2005):340-345.
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