Influence of various annealing temperatures on microstructure evolution of oxidized Ni/Au ohmic contact to p-GaN studied by synchrotron X-ray diffraction
Hu, CY; Qin, ZX; Chen, ZZ; Yang, ZJ; Yu, TJ; Hu, XD; Wu, K; Jia, QJ; Wang, HH; Zhang, GY; Jia QJ(贾全杰); Wang HH(王焕华)
刊名JOURNAL OF CRYSTAL GROWTH
2005
卷号285期号:3页码:333-338
关键词x-ray diffraction gallium compounds metals nitrides semiconducting III-V materials
学科分类Crystallography; Materials Science; Physics
DOI10.1016/j.jcrysgro.2005.08.045
通讯作者Peking Univ, Sch Phys, Natl Key Lab Artificial Microstruct & Mesoscop Ph, Beijing 100871, Peoples R China ; Chinese Acad Sci, Beijing Synchrotron Radiat Facil, Inst High Energy Phys, Beijing 100037, Peoples R China
文章类型Article
英文摘要The influence of various annealing temperatures on microstructure evolution of oxidized Ni(20 nm)/Au(20 nm) ohmic contact to p-GaN was studied by synchrotron X-ray diffraction (XRD). In association with the variation of the specific contact resistance (rho(c)), it is observed that NiO and An began to form partially epitaxial structure on p-GaN at 450 degrees C, which played a critical role in lowering down the rho(c). At 500 degrees C, the epitaxial structure of An and NiO was improved further while the lowest rho(c) was reached. However, at 600 degrees C, the epitaxial structure of NiO was transformed to polycrystalline structure again with a sharp increase of rho(c). Therefore, it is suggested that the degradation of the epitaxial structure of NiO is responsible for the sharp increase of rho(c). (c) 2005 Elsevier B.V. All rights reserved.
类目[WOS]Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]Crystallography ; Materials Science ; Physics
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语种英语
WOS记录号WOS:000233389000006
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被引频次:9[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/237030
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
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GB/T 7714
Hu, CY,Qin, ZX,Chen, ZZ,et al. Influence of various annealing temperatures on microstructure evolution of oxidized Ni/Au ohmic contact to p-GaN studied by synchrotron X-ray diffraction[J]. JOURNAL OF CRYSTAL GROWTH,2005,285(3):333-338.
APA Hu, CY.,Qin, ZX.,Chen, ZZ.,Yang, ZJ.,Yu, TJ.,...&王焕华.(2005).Influence of various annealing temperatures on microstructure evolution of oxidized Ni/Au ohmic contact to p-GaN studied by synchrotron X-ray diffraction.JOURNAL OF CRYSTAL GROWTH,285(3),333-338.
MLA Hu, CY,et al."Influence of various annealing temperatures on microstructure evolution of oxidized Ni/Au ohmic contact to p-GaN studied by synchrotron X-ray diffraction".JOURNAL OF CRYSTAL GROWTH 285.3(2005):333-338.
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