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Oriented growth of Ta2O5 films induced by substrate bias
Huang, AP; Xu, SL; Zhu, MK; Li, GH; Liu, T; Wang, B; Yan, H; Liu T(刘涛)
2003
发表期刊JOURNAL OF CRYSTAL GROWTH
卷号255期号:1-2页码:145-149
通讯作者Univ Sci & Technol Beijing, Quantum Mat Lab, Beijing 100022, Peoples R China ; Chinese Acad Sci, Beijing Synchrotron Radiat Facil, Beijing 100039, Peoples R China
摘要Tantalum pentoxide (Ta2O5) films with high <001> orientation have exceptionally high dielectric constant. Usually, oriented Ta2O5 films were fabricated by post-annealing. In this paper, as-deposited Ta2O5 films with high <001> orientation were sputtered at low temperature with substrate bias. The orientation of the films is modified to be better with the bias being increased. The bias effect on the orientation of the films is discussed in details. (C) 2003 Elsevier Science B.V. All rights reserved.
文章类型Article
关键词crystal structure nucleation oxides dielectric materials
学科领域Crystallography; Materials Science; Physics
DOI10.1016/S0022-0248(03)01249-1
研究领域[WOS]Crystallography ; Materials Science ; Physics
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语种英语
WOS类目Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号WOS:000183767000019
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被引频次:6[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/236831
专题多学科研究中心
作者单位中国科学院高能物理研究所
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GB/T 7714
Huang, AP,Xu, SL,Zhu, MK,et al. Oriented growth of Ta2O5 films induced by substrate bias[J]. JOURNAL OF CRYSTAL GROWTH,2003,255(1-2):145-149.
APA Huang, AP.,Xu, SL.,Zhu, MK.,Li, GH.,Liu, T.,...&刘涛.(2003).Oriented growth of Ta2O5 films induced by substrate bias.JOURNAL OF CRYSTAL GROWTH,255(1-2),145-149.
MLA Huang, AP,et al."Oriented growth of Ta2O5 films induced by substrate bias".JOURNAL OF CRYSTAL GROWTH 255.1-2(2003):145-149.
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