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Influences of Si spacer layers on the structures of Ge/Si quantum dot bilayers
Jiang XM(姜晓明); Jiang, X; Metzger, TH; Sztucki, M; Jiang, Z; Jiang, W; Xian, D; Xian DC(冼鼎昌)
2003
发表期刊NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
卷号200页码:40-45
通讯作者Beijing Synchrotron Radiat Lab, Beijing 100039, Peoples R China ; European Synchrotron Radiat Facil, F-38043 Grenoble, France ; Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China
文章类型Article; Proceedings Paper
摘要The influences of the Si caplayer or spacer layer on the microstructures of the Ge/Si(0 0 1) quantum dots (underneath or on the top of the Si thin layer) are studied by synchrotron radiation X-ray techniques (reflection, diffraction and grazing incident diffraction (GID)) and atomic force microscope (AFM). It is found that the Ge composition varies with the dot size in the freestanding Ge dots sample with a bi-modal size distribution. When a Si caplayer is deposited on the Ge dots, the Ge quantum dots are laterally compressed by the surrounding Si lattice. The strain of the Ge dots spreads into the caplayer and reaches to the surface even if the caplayer is as thick as 70 nm. It is confirmed that this residual strain induced by the buried Ge dots improves the size uniformity of Ge dots grown on the Si caplayer (or spacer layer) surface, so that a uniform size distribution of the Ge dots is observed by AFM and the corresponding strain is measured by GID. However, for a Si caplayer with a thickness larger than 90 nm, no residual strain from the buried quantum dots was observed near the sample's surface. In this case, the dots grown on the surface show the same features as that grown on a Si substrate wafer (i.e. bi-modal size distribution), so that no strain-mediated influence of the buried dots takes place. (C) 2002 Elsevier Science B.V. All rights reserved.
关键词Ge quantum dots microstructure X-ray diffraction
学科领域Instruments & Instrumentation; Nuclear Science & Technology; Physics
DOI10.1016/S0168-583X(02)01672-5
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语种英语
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS类目Instruments & Instrumentation ; Nuclear Science & Technology ; Physics, Atomic, Molecular & Chemical ; Physics, Nuclear
WOS记录号WOS:000180998600007
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被引频次:4[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/236803
专题院士
作者单位中国科学院高能物理研究所
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Jiang XM,Jiang, X,Metzger, TH,et al. Influences of Si spacer layers on the structures of Ge/Si quantum dot bilayers[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2003,200:40-45.
APA 姜晓明.,Jiang, X.,Metzger, TH.,Sztucki, M.,Jiang, Z.,...&冼鼎昌.(2003).Influences of Si spacer layers on the structures of Ge/Si quantum dot bilayers.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,200,40-45.
MLA 姜晓明,et al."Influences of Si spacer layers on the structures of Ge/Si quantum dot bilayers".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 200(2003):40-45.
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