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In-situ GISAXS study on the oxidation behavior of liquid Ga on Ni(Cu)/Si substrates
Cheng; Weidong; Liu; Mingling; Wu; Zhaojun; Xing; Xueqing; Mo; Guang; Wu; Zhonghua; Liu; Hong; Xing XQ(邢雪青); Mo G(默广); Wu ZH(吴忠华)
2015
Source PublicationNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN0168-583X
EISSN1872-9584
Volume362Pages:133-137
SubtypeArticle
AbstractLiquid Ga could be used as a flexible heat-transfer medium or contact medium in the synchrotron-radiation-based instruments. The chemical stability of liquid Ga on other metal surface determines the serviceability of liquid Ga. In this paper, the oxidation evolutions of liquid Ga on Ni and Cu substrates have been investigated by in-situ grazing incidence small angle X-ray scattering (GISAXS) as a function of substrate temperature. The liquid Ga on Ni and Cu substrates shows different oxidation behaviors. A successive and slower oxidation from oxide clusters to oxide layer takes place with temperature increasing from 25 to 190 degrees C on the surface of the Ga/Ni/Si specimen, but a quick oxidation occurs on the entire surface of the Ga/Cu/Si specimen at the initial 25 degrees C. The subsequent heating increases the surface roughness of both liquid Ga, but increases simultaneously the surface curvature of the Ga/Cu/Si specimen. The understanding of the substrate-dependent oxidation behavior of liquid Ga is beneficial to its application as a heat-transfer medium. (C) 2015 Published by Elsevier B.V.
KeywordGISAXS Liquid gallium Oxidation
Subject AreaInstruments & Instrumentation; Nuclear Science & Technology; Physics
DOI10.1016/j.nimb.2015.09.064
Indexed BySCI ; ADS ; EI
Language英语
WOS Research AreaInstruments & Instrumentation ; Nuclear Science & Technology ; Physics, Atomic, Molecular & Chemical ; Physics, Nuclear
WOS SubjectInstruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS IDWOS:000364883800021
ADS Bibcode2015NIMPB.362..133C
ADS URLhttps://ui.adsabs.harvard.edu/abs/2015NIMPB.362..133C
ADS CITATIONShttps://ui.adsabs.harvard.edu/abs/2015NIMPB.362..133C/citations
Citation statistics
Cited Times:1 [ADS]
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/228906
Collection多学科研究中心
Recommended Citation
GB/T 7714
Cheng,Weidong,Liu,et al. In-situ GISAXS study on the oxidation behavior of liquid Ga on Ni(Cu)/Si substrates[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2015,362:133-137.
APA Cheng.,Weidong.,Liu.,Mingling.,Wu.,...&吴忠华.(2015).In-situ GISAXS study on the oxidation behavior of liquid Ga on Ni(Cu)/Si substrates.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,362,133-137.
MLA Cheng,et al."In-situ GISAXS study on the oxidation behavior of liquid Ga on Ni(Cu)/Si substrates".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 362(2015):133-137.
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