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Influence of defects and displacements in sapphire doped with Ag+ ions
Chen, H.-j.; Y.-h. Wang; X.-j. Zhang; L.-r. Zheng; Zheng LR(郑黎荣)
2015
Source PublicationAPPLIED SURFACE SCIENCE
ISSN0169-4332
EISSN1873-5584
Volume357Issue:APages:1231-1235
SubtypeArticle
AbstractThe Ag:Al2O3 composites are prepared by Ag+ ions implantation with the acceleration voltage of 35 kV. The formation of silver nanoparticle and the surface plasma resonance (SPR) effect are studied. The appearance of absorption bands demonstrates the formation of silver nanoparticles in Al2O3. Long-time sputtering due to the high fluency removes the surface layer, and the embedded Ag NPs appear on the surface though the majorities are in the deeper area. The fluorescence spectrum of Ag:Al2O3 evaluated by Gaussian fitting consists of three peaks: 365 nm, 403 nm and 471 nm. These bands should be attributed to defects produced by the matrix and embedded Ag+ ions. In addition, a strong peak at 693 nm is supposed to be R line for Al2O3 in the emission spectrum (VUV spectrum). The crystal structure and optical properties of ion implanted sapphire have been changed after ion implantation and it is analyzed by defects and displacements. Eventually, the SRIM program is used to simulate the growth of nanoparticles with four stages. (C) 2015 Elsevier B.V. All rights reserved.
KeywordNano-composites Microstructure Optical properties
Subject AreaChemistry; Materials Science; Physics
DOI10.1016/j.apsusc.2015.09.166
Indexed BySCI ; ADS ; EI
Language英语
WOS Research AreaChemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS SubjectChemistry ; Materials Science ; Physics
WOS IDWOS:000366216900160
ADS Bibcode2015ApSS..357.1231C
ADS URLhttps://ui.adsabs.harvard.edu/abs/2015ApSS..357.1231C
ADS CITATIONShttps://ui.adsabs.harvard.edu/abs/2015ApSS..357.1231C/citations
Citation statistics
Cited Times:1 [ADS]
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/228518
Collection多学科研究中心
Recommended Citation
GB/T 7714
Chen, H.-j.,Y.-h. Wang,X.-j. Zhang,et al. Influence of defects and displacements in sapphire doped with Ag+ ions[J]. APPLIED SURFACE SCIENCE,2015,357(A):1231-1235.
APA Chen, H.-j.,Y.-h. Wang,X.-j. Zhang,L.-r. Zheng,&郑黎荣.(2015).Influence of defects and displacements in sapphire doped with Ag+ ions.APPLIED SURFACE SCIENCE,357(A),1231-1235.
MLA Chen, H.-j.,et al."Influence of defects and displacements in sapphire doped with Ag+ ions".APPLIED SURFACE SCIENCE 357.A(2015):1231-1235.
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