IHEP OpenIR  > 多学科研究中心
Improving Room-Temperature Ferromagnetism in Mn-Implanted Si by High-Temperature Annealing
Li, TC; Liu, CX; Chen, JH; Peng, GL; Luo, FF; Wen, W; Zhang, J; Guo, LP; Zhang J(张静)
2015
发表期刊IEEE TRANSACTIONS ON MAGNETICS
卷号51期号:6页码:2400204
文章类型Article
摘要Mn-implanted Si with postannealing treatment at 873, 973, 1073, and 1173 K exhibited ferromagnetism at room temperature. Ferromagnetism was enhanced as the annealing temperature increased. The largest value of saturation magnetization was found in the sample annealed at 1173 K. X-ray absorption near-edge structure spectra showed no formation of substitutional-interstitial Mn-Mn dimmers in all samples. On the other hand, high-resolution transmission electron microscopy and glancing incidence X-ray diffraction revealed a variety of MnSi compounds. We propose that the ferromagnetism has the origin from the MnSi1.7 nanoparticles as well as the MnSi 1:1 phase, which possesses strong short-range spin correlation. The formation of antiferromagnetic Mn5Si3 compound in 873 and 973 K annealed samples substantially reduced the magnetism. This paper provides new insights into the understanding of ferromagnetism in Mn-implanted Si diluted magnetic semiconductors.
关键词Diluted magnetic semiconductors (DMSs) Mn-implanted Si room-temperature ferromagnetism short-range spin correlation
学科领域Engineering; Physics
DOI10.1109/TMAG.2014.2375852
收录类别SCI ; EI
WOS类目Engineering, Electrical & Electronic ; Physics, Applied
WOS记录号WOS:000356516600004
引用统计
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/228417
专题多学科研究中心
推荐引用方式
GB/T 7714
Li, TC,Liu, CX,Chen, JH,et al. Improving Room-Temperature Ferromagnetism in Mn-Implanted Si by High-Temperature Annealing[J]. IEEE TRANSACTIONS ON MAGNETICS,2015,51(6):2400204.
APA Li, TC.,Liu, CX.,Chen, JH.,Peng, GL.,Luo, FF.,...&张静.(2015).Improving Room-Temperature Ferromagnetism in Mn-Implanted Si by High-Temperature Annealing.IEEE TRANSACTIONS ON MAGNETICS,51(6),2400204.
MLA Li, TC,et al."Improving Room-Temperature Ferromagnetism in Mn-Implanted Si by High-Temperature Annealing".IEEE TRANSACTIONS ON MAGNETICS 51.6(2015):2400204.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
353.pdf(2828KB)期刊论文作者接受稿限制开放CC BY-NC-SA请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Li, TC]的文章
[Liu, CX]的文章
[Chen, JH]的文章
百度学术
百度学术中相似的文章
[Li, TC]的文章
[Liu, CX]的文章
[Chen, JH]的文章
必应学术
必应学术中相似的文章
[Li, TC]的文章
[Liu, CX]的文章
[Chen, JH]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。