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Control of the Metal-Insulator Transition in VO2 Epitaxial Film by Modifying Carrier Density
Chen, FH; Fan, LL; Chen, S; Liao, GM; Chen, YL; Wu, P; Song, L; Zou, CW; Wu, ZY; Wu ZY(吴自玉)
2015
Source PublicationACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
EISSN1944-8252
Volume7Issue:12Pages:6875-6881
SubtypeArticle
AbstractExternal controlling the phase transition behavior of vanadium dioxide is important to realize its practical applications as energy-efficient electronic devices. Because of its relatively high phase transition temperature of 68 degrees C, the central challenge for VO2-based electronics, lies in finding an energy efficient way, to modulate the phase transition in a reversible and reproducible manner. In this work, we report an experimental realization of p-n heterojunctions by growing VO2 film on p-type GaN substrate. By adding the bias voltage on the p-n junction, the metal-insulator transition behavior of VO2 film can be changed continuously. It is demonstrated that the phase transition of VO2 film is closely associated with the carrier distribution within the space charge region, which can be directly controlled by the bias voltage. Our findings offer novel opportunities for modulating the phase transition of VO2 film in a reversible way as well as extending the concept of electric-field modulation on other phase transition materials.
Keywordvanadium dioxide p-GaN phase transition modulation carrier concentration
Subject AreaScience & Technology - Other Topics; Materials Science
DOI10.1021/acsami.5b00540
Indexed BySCI ; EI
Language英语
WOS Research AreaNanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS SubjectScience & Technology - Other Topics ; Materials Science
WOS IDWOS:000352246700062
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Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/228347
Collection多学科研究中心
Recommended Citation
GB/T 7714
Chen, FH,Fan, LL,Chen, S,et al. Control of the Metal-Insulator Transition in VO2 Epitaxial Film by Modifying Carrier Density[J]. ACS APPLIED MATERIALS & INTERFACES,2015,7(12):6875-6881.
APA Chen, FH.,Fan, LL.,Chen, S.,Liao, GM.,Chen, YL.,...&吴自玉.(2015).Control of the Metal-Insulator Transition in VO2 Epitaxial Film by Modifying Carrier Density.ACS APPLIED MATERIALS & INTERFACES,7(12),6875-6881.
MLA Chen, FH,et al."Control of the Metal-Insulator Transition in VO2 Epitaxial Film by Modifying Carrier Density".ACS APPLIED MATERIALS & INTERFACES 7.12(2015):6875-6881.
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