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Control of the Metal-Insulator Transition in VO2 Epitaxial Film by Modifying Carrier Density
Chen, FH; Fan, LL; Chen, S; Liao, GM; Chen, YL; Wu, P; Song, L; Zou, CW; Wu, ZY; Wu ZY(吴自玉)
2015
发表期刊ACS APPLIED MATERIALS & INTERFACES
卷号7期号:12页码:6875-6881
文章类型Article
摘要External controlling the phase transition behavior of vanadium dioxide is important to realize its practical applications as energy-efficient electronic devices. Because of its relatively high phase transition temperature of 68 degrees C, the central challenge for VO2-based electronics, lies in finding an energy efficient way, to modulate the phase transition in a reversible and reproducible manner. In this work, we report an experimental realization of p-n heterojunctions by growing VO2 film on p-type GaN substrate. By adding the bias voltage on the p-n junction, the metal-insulator transition behavior of VO2 film can be changed continuously. It is demonstrated that the phase transition of VO2 film is closely associated with the carrier distribution within the space charge region, which can be directly controlled by the bias voltage. Our findings offer novel opportunities for modulating the phase transition of VO2 film in a reversible way as well as extending the concept of electric-field modulation on other phase transition materials.
关键词vanadium dioxide p-GaN phase transition modulation carrier concentration
学科领域Science & Technology - Other Topics; Materials Science
DOI10.1021/acsami.5b00540
收录类别SCI ; EI
WOS类目Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号WOS:000352246700062
引用统计
被引频次:30[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/228347
专题多学科研究中心
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Chen, FH,Fan, LL,Chen, S,et al. Control of the Metal-Insulator Transition in VO2 Epitaxial Film by Modifying Carrier Density[J]. ACS APPLIED MATERIALS & INTERFACES,2015,7(12):6875-6881.
APA Chen, FH.,Fan, LL.,Chen, S.,Liao, GM.,Chen, YL.,...&吴自玉.(2015).Control of the Metal-Insulator Transition in VO2 Epitaxial Film by Modifying Carrier Density.ACS APPLIED MATERIALS & INTERFACES,7(12),6875-6881.
MLA Chen, FH,et al."Control of the Metal-Insulator Transition in VO2 Epitaxial Film by Modifying Carrier Density".ACS APPLIED MATERIALS & INTERFACES 7.12(2015):6875-6881.
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