Ga doped In2O3-based thermoelectric materials were prepared by spark plasma sintering (SPS) using sintered powders in the low temperature solid phase. The solubility of Ga in In2O3 is about 10 at%, much larger than other elements such as Ge, Ce, etc. The larger solubility of Ga allows us to optimize the thermal and electrical transport properties of Ga doped In2O3 in a wider window. While tuning the concentration of dopants, the thermoelectric performance of Ga doped In2O3 was enhanced through a synergistic approach combining band-gap engineering and phonon suppression. The power factor increases from similar to 0.5 x 10(-4) to similar to 9.6 x 10(-4) W mK(-2) at 700 degrees C while thermal conductivity reduces from similar to 4 to similar to 2 W mK(-1) at 700 degrees C in In1.9Ga0.1O3. The maximum ZT of 0.37, increased by a factor of 4 from the pristine In2O3, is achieved in In1.9Ga0.1O3 at 700 degrees C.
; Physics, Atomic, Molecular & Chemical
Liu, Y,Xu W,Xu, W,et al. Enhanced thermoelectric properties of Ga-doped In2O3 ceramics via synergistic band gap engineering and phonon suppression[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2015,17(17):11229-11233.
Liu, Y.,徐伟.,Xu, W.,Liu, DB.,Yu, MJ.,...&于梅娟.(2015).Enhanced thermoelectric properties of Ga-doped In2O3 ceramics via synergistic band gap engineering and phonon suppression.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,17(17),11229-11233.
Liu, Y,et al."Enhanced thermoelectric properties of Ga-doped In2O3 ceramics via synergistic band gap engineering and phonon suppression".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 17.17(2015):11229-11233.