IHEP OpenIR
Vacancy-Induced Ferromagnetism of MoS2 Nanosheets
Cai, L; He, JF; Liu, QH; Yao, T; Chen, L; Yan, WS; Hu, FC; Jiang, Y; Zhao, YD; Hu, TD; Sun, ZH; Wei, SQ; Zhao YD(赵屹东); Hu TD(胡天斗)
2015
Source PublicationJOURNAL OF THE AMERICAN CHEMICAL SOCIETY
ISSN0002-7863
Volume137Issue:7Pages:2622-2627
SubtypeArticle
AbstractOutstanding magnetic properties are highly desired for two-dimensional ultrathin semiconductor nanosheets. Here, we propose a phase incorporation strategy to induce robust room-temperature ferromagnetism in a nonmagnetic MoS2 semiconductor. A two-step hydrothermal method was used to intentionally introduce sulfur vacancies in a 2H-MoS2 ultrathin nanosheet host, which prompts the transformation of the surrounding 2H-MoS2 local lattice into a trigonal (1T-MoS2) phase. 25% 1T-MoS2 phase incorporation in 2H-MoS2 nanosheets can enhance the electron carrier concentration by an order, introduce a Mo4+ 4d energy state within the bandgap, and create a robust intrinsic ferromagnetic response of 0.25 mu(B)/Mo by the exchange interactions between sulfur vacancy and the Mo4+ 4d bandgap state at room temperature. This design opens up new possibility for effective manipulation of exchange interactions in two-dimensional nanostructures.
Subject AreaChemistry
DOI10.1021/ja5120908
Indexed BySCI ; EI
Language英语
WOS Research AreaChemistry, Multidisciplinary
WOS SubjectChemistry
WOS IDWOS:000350192700032
Citation statistics
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/228262
Collection中国科学院高能物理研究所
Recommended Citation
GB/T 7714
Cai, L,He, JF,Liu, QH,et al. Vacancy-Induced Ferromagnetism of MoS2 Nanosheets[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2015,137(7):2622-2627.
APA Cai, L.,He, JF.,Liu, QH.,Yao, T.,Chen, L.,...&胡天斗.(2015).Vacancy-Induced Ferromagnetism of MoS2 Nanosheets.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,137(7),2622-2627.
MLA Cai, L,et al."Vacancy-Induced Ferromagnetism of MoS2 Nanosheets".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 137.7(2015):2622-2627.
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