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Oxygen Vacancy-Induced Room Temperature Ferromagnetism and Magnetoresistance in Fe-Doped In2O3 Films
An, YK; Ren, Y; Yang, DY; Wu, ZH; Liu, JW; Wu ZH(吴忠华)
2015
Source PublicationJOURNAL OF PHYSICAL CHEMISTRY C
ISSN1932-7447
EISSN1932-7455
Volume119Issue:8Pages:4414-4421
SubtypeArticle
AbstractThe (In1-xFex)(2)O-3 films (0 <= x <= 0.09) were prepared by RF-magnetron sputtering. Structural, magnetic and transport properties of the films were investigated systematically both experimentally and theoretically. X-ray absorption spectroscopy (XAS) and multiple-scattering ab initio theoretical calculations reveal that Fe dopant atoms are substitutionally incorporated into In2O3 lattice with a mixed-valence (Fe2+/Fe3+) and form Fe-In1+2 V-O complex. All the films display room temperature ferromagnetism and the saturated magnetization (M-s) increases monotonically with the increase of Fe concentration. The Mott variable range hopping (VRH) transport behavior dominates the conduction mechanism of the films at low temperature, confirming that the carriers are localized. The Fe doping has profound effects on the positive and negative MR contributions. The positive MR contribution becomes more pronounced with Fe doping, reflecting the occurrence of spin polarization and stronger s-d exchange interaction. The bound magnetic polarons (BMPs) associated with oxygen vacancy can be considered to play an important role in achieving the ferromagnetic order of the (In1-xFex)(2)O-3 films. The variation of Ms with Fe doping has a strong correlation with the localization radius xi of carriers and the characteristic hopping temperature T-0, indicating that the change of localization effect can remarkably influence the ferromagnetic order of the (In1-xFex)(2)O-3 films.
Subject AreaChemistry; Science & Technology - Other Topics; Materials Science
DOI10.1021/jp513016q
Indexed BySCI ; EI
Language英语
WOS Research AreaChemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS SubjectChemistry ; Science & Technology - Other Topics ; Materials Science
WOS IDWOS:000350329300058
Citation statistics
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/228259
Collection多学科研究中心
Recommended Citation
GB/T 7714
An, YK,Ren, Y,Yang, DY,et al. Oxygen Vacancy-Induced Room Temperature Ferromagnetism and Magnetoresistance in Fe-Doped In2O3 Films[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2015,119(8):4414-4421.
APA An, YK,Ren, Y,Yang, DY,Wu, ZH,Liu, JW,&吴忠华.(2015).Oxygen Vacancy-Induced Room Temperature Ferromagnetism and Magnetoresistance in Fe-Doped In2O3 Films.JOURNAL OF PHYSICAL CHEMISTRY C,119(8),4414-4421.
MLA An, YK,et al."Oxygen Vacancy-Induced Room Temperature Ferromagnetism and Magnetoresistance in Fe-Doped In2O3 Films".JOURNAL OF PHYSICAL CHEMISTRY C 119.8(2015):4414-4421.
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