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Oxygen Vacancy-Induced Room Temperature Ferromagnetism and Magnetoresistance in Fe-Doped In2O3 Films
An, YK; Ren, Y; Yang, DY; Wu, ZH; Liu, JW; Wu ZH(吴忠华)
2015
发表期刊JOURNAL OF PHYSICAL CHEMISTRY C
卷号119期号:8页码:4414-4421
文章类型Article
摘要The (In1-xFex)(2)O-3 films (0 <= x <= 0.09) were prepared by RF-magnetron sputtering. Structural, magnetic and transport properties of the films were investigated systematically both experimentally and theoretically. X-ray absorption spectroscopy (XAS) and multiple-scattering ab initio theoretical calculations reveal that Fe dopant atoms are substitutionally incorporated into In2O3 lattice with a mixed-valence (Fe2+/Fe3+) and form Fe-In1+2 V-O complex. All the films display room temperature ferromagnetism and the saturated magnetization (M-s) increases monotonically with the increase of Fe concentration. The Mott variable range hopping (VRH) transport behavior dominates the conduction mechanism of the films at low temperature, confirming that the carriers are localized. The Fe doping has profound effects on the positive and negative MR contributions. The positive MR contribution becomes more pronounced with Fe doping, reflecting the occurrence of spin polarization and stronger s-d exchange interaction. The bound magnetic polarons (BMPs) associated with oxygen vacancy can be considered to play an important role in achieving the ferromagnetic order of the (In1-xFex)(2)O-3 films. The variation of Ms with Fe doping has a strong correlation with the localization radius xi of carriers and the characteristic hopping temperature T-0, indicating that the change of localization effect can remarkably influence the ferromagnetic order of the (In1-xFex)(2)O-3 films.
学科领域Chemistry; Science & Technology - Other Topics; Materials Science
DOI10.1021/jp513016q
收录类别SCI ; EI
WOS类目Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号WOS:000350329300058
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被引频次:13[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/228259
专题多学科研究中心
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GB/T 7714
An, YK,Ren, Y,Yang, DY,et al. Oxygen Vacancy-Induced Room Temperature Ferromagnetism and Magnetoresistance in Fe-Doped In2O3 Films[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2015,119(8):4414-4421.
APA An, YK,Ren, Y,Yang, DY,Wu, ZH,Liu, JW,&吴忠华.(2015).Oxygen Vacancy-Induced Room Temperature Ferromagnetism and Magnetoresistance in Fe-Doped In2O3 Films.JOURNAL OF PHYSICAL CHEMISTRY C,119(8),4414-4421.
MLA An, YK,et al."Oxygen Vacancy-Induced Room Temperature Ferromagnetism and Magnetoresistance in Fe-Doped In2O3 Films".JOURNAL OF PHYSICAL CHEMISTRY C 119.8(2015):4414-4421.
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