Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

doi:10.1002/pssa.200723162

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	Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
	Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD; Jia QJ(贾全杰); Guo LP(郭立平); Hu TD(胡天斗)
	2008
发表期刊	PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (IF:1.775[JCR-2016],1.588[5-Year])
卷号	205 期号:2 页码:#REF!
通讯作者	Wu, JJ (reprint author), Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Res Ctr Wide Gap Semicond, Beijing 100871, Peoples R China.
文章类型	Article
摘要	Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
学科领域	Materials Science; Physics
DOI	10.1002/pssa.200723162
收录类别	SCI ; ADS
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000253551000013
ADS Bibcode	2008PSSAR.205..294W
ADS URL	https://ui.adsabs.harvard.edu/abs/2008PSSAR.205..294W
ADS引文	https://ui.adsabs.harvard.edu/abs/2008PSSAR.205..294W/citations
引用统计	正在获取... 被引频次：0 [ADS]
文献类型	期刊论文
条目标识符	https://ir.ihep.ac.cn/handle/311005/227469
专题	多学科研究中心
推荐引用方式 GB/T 7714	Wu, JJ,Zhao, LB,Zhang, GY,et al. Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2008,205(2):#REF!.
APA	Wu, JJ.,Zhao, LB.,Zhang, GY.,Liu, XL.,Zhu, QS.,...&胡天斗.(2008).Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111).PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,205(2),#REF!.
MLA	Wu, JJ,et al."Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 205.2(2008):#REF!.