| Study of the features of 400nm IMPL RADFET dosimeter |
| 其他题名 | 400nm IMPL RADFET剂量计的性能研究
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| Gong, H; Li, J; Yang, SM; Shao, BB; Gong, GH; Li, YX; Xie, XX; Li J(李金); Xie XX(谢小希)
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| 2007
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| 发表期刊 | HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
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| 卷号 | 31期号:3页码:#REF! |
| 通讯作者 | Gong, H (reprint author), Tsing Hua Univ, Dept Engn Phys, Beijing 100084, Peoples R China.
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| 文章类型 | Article
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| 摘要 | RADFET multi-channel detector will be used to measure the integrated dose near the BESIII crystal calorimeter. In the design of this detector, it is significant to know the detailed features of 400nm IMPL RADFET dosimeter. By using (CO)-C-60 source, we made experiments and studied the features of this kind of RADFET dosimeter, including the consistency between different channels, the radiation intensity dependence to the integrated dose measurement and the annealing phenomena of RADFET dosimeter. The study results are very useful for the design of RADFET multi-channel detector and the application of RADFET dosimeter in other fields. |
| 关键词 | BESIII
RADFET dosimeter
integrated dose measurement
radiation intensity dependence
annealing
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| 学科领域 | Physics
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| 收录类别 | SCI
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| WOS类目 | Physics, Nuclear
; Physics, Particles & Fields
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| WOS记录号 | WOS:000244902300012
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| 引用统计 |
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| 文献类型 | 期刊论文
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| 条目标识符 | http://ir.ihep.ac.cn/handle/311005/227406
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| 专题 | 多学科研究中心
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推荐引用方式
GB/T 7714 |
Gong, H,Li, J,Yang, SM,et al. Study of the features of 400nm IMPL RADFET dosimeter[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2007,31(3):#REF!.
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| APA |
Gong, H.,Li, J.,Yang, SM.,Shao, BB.,Gong, GH.,...&谢小希.(2007).Study of the features of 400nm IMPL RADFET dosimeter.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,31(3),#REF!.
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| MLA |
Gong, H,et al."Study of the features of 400nm IMPL RADFET dosimeter".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 31.3(2007):#REF!.
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