Jiang, XM (reprint author), Inst High Energy Phys, POB 918, Beijing 100039, Peoples R China.
Article; Proceedings Paper
Delta-doping is one of the methods to realize high concentration doping in semiconductors, by which the doped atoms are confined in the thin layer in semiconductor crystals. Sb and Er delta doping layers in silicon crystals were grown at different temperatures by silicon molecular beam epitaxy (MBE). An oxygen ambient was also used in the Er delta doping process. Synchrotron radiation X-ray reflection technique was employed to measure the dopant depth distribution. Results showed that the growth temperature should be below 300 degrees C for obtaining narrow Sb or Er delta doping in order to avoid the surface segregation of Sb or Er atoms. Thermal stability of such delta doped structure was also studied by this technique, no significant change was observed in Sb delta doped Si crystal after annealing at 500 degrees C for 30 min. Besides, suppressing effect of surface segregation of dopant Er by oxygen was investigated. With the oxygen ambient, narrow Er delta doping was realized at growth temperature of 400 degrees C, which was 100 degrees C higher than that in the normal MBE epitaxy.
Jiang XM,Jia QJ,Jiang, XM,et al. Depth profile of delta-doped semiconductors by X-ray reflection technique[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,1999,38(1):#REF!.
姜晓明,贾全杰,Jiang, XM,Jia, QJ,Jiang, ZM,&Iida, A.(1999).Depth profile of delta-doped semiconductors by X-ray reflection technique.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,38(1),#REF!.
姜晓明,et al."Depth profile of delta-doped semiconductors by X-ray reflection technique".JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 38.1(1999):#REF!.