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Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate
Sun, YP; Fu, Y; Qu, B; Wang, YT; Feng, ZH; Shen, XM; Zhao, DG; Zheng, XH; Duan, LH; Li, BC; Zhang, SM; Yang, H; Jiang XM(姜晓明); Zheng WL(郑文莉); Jia QJ(贾全杰)
2002
发表期刊SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES
卷号45期号:3页码:#REF!
通讯作者Sun, YP (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
文章类型Article
摘要We successfully used the metal mediated-wafer bonding technique in transferring the as-grown cubic GaN LED structure of Si substrate. The absorbing GaAs substrate was removed by using the chemical solutions of NH(4)OH : H(2)O(2)=1 : 10. SEM and PL results show that wafer bonding technique could transfer the cubic GaN epilayers uniformly to Si without affecting the physical and optical properties of epilayers. XRD result shows that there appeared new peaks related to AgGa(2) and Ni(4)N diffraction, indicating that the metals used as adhesive and protective layers interacted with the p-GaN layer during the long annealing process. It is just the reaction that ensures the reliability of the integration of GaN with metal and minor contact resistance on the interface.
关键词wafer bonding cubic GaN/GaAs(001) Si-substrate
学科领域Engineering; Materials Science
DOI10.1360/02ye9030
收录类别SCI
WOS类目Engineering, Multidisciplinary ; Materials Science, Multidisciplinary
WOS记录号WOS:000175593400004
引用统计
被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/227224
专题多学科研究中心
中国科学院高能物理研究所_人力资源处
推荐引用方式
GB/T 7714
Sun, YP,Fu, Y,Qu, B,et al. Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate[J]. SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES,2002,45(3):#REF!.
APA Sun, YP.,Fu, Y.,Qu, B.,Wang, YT.,Feng, ZH.,...&贾全杰.(2002).Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate.SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES,45(3),#REF!.
MLA Sun, YP,et al."Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate".SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES 45.3(2002):#REF!.
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