Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy
Jiang, ZM; Pei, CW; Liao, LS; Zhou, XF; Zhang, XJ; Wang, X; Jia, QJ; Jiang, XM; Ma, ZH; Smith, TR; Sou, IK; Jia QJ(贾全杰); Jiang XM(姜晓明)
刊名THIN SOLID FILMS
1998
卷号336期号:1-2页码:#REF!
关键词surface segregation X-ray reflectivity molecular beam epitaxy
学科分类Materials Science; Physics
DOI10.1016/S0040-6090(98)01242-5
通讯作者Liao, LS (reprint author), Fudan Univ, Natl Key Lab, Surface Phys Lab, Shanghai 200433, Peoples R China.
文章类型Article; Proceedings Paper
英文摘要Surface segregation of Sb atoms at low temperatures below 400 degrees C during Si molecular beam epitaxy (MBE) growth is studied by ex situ X-ray reflectivity measurements and secondary ion mass spectroscopy (SIMS). One monolayer of Sb atoms was first deposited at the temperature of 300 degrees C, followed by a 23-nm thick Si overlayer grown at different temperatures of 250, 300, 350, and 400 degrees C. The decay lengths of dopant Sb distribution profiles are obtained to be 0.15, 0.95, 3.5, and >20 nm by simulations of their X-ray reflectivity curves, respectively. A strong surface segregation of Sb atoms is observed at temperatures of 350 and 400 degrees C, which is also confirmed by the SIMS profiles. Surface structure change caused by a high coverage of Sb is suggested to explain such a strong segregation. (C) 1998 Elsevier Science S.A All rights reserved.
类目[WOS]Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
收录类别SCI
WOS记录号WOS:000078141900056
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被引频次:10[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/227119
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
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Jiang, ZM,Pei, CW,Liao, LS,et al. Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy[J]. THIN SOLID FILMS,1998,336(1-2):#REF!.
APA Jiang, ZM.,Pei, CW.,Liao, LS.,Zhou, XF.,Zhang, XJ.,...&姜晓明.(1998).Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy.THIN SOLID FILMS,336(1-2),#REF!.
MLA Jiang, ZM,et al."Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy".THIN SOLID FILMS 336.1-2(1998):#REF!.
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