| Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering | |
Tan, WS; Cai, HL; Wu, XS; Jiang, SS; Zheng, WL; Jia, QJ; Zheng WL(郑文莉) ; Jia QJ(贾全杰)
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| 2005 | |
| Source Publication | JOURNAL OF ALLOYS AND COMPOUNDS
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| Volume | 397Issue:1-2Pages:#REF! |
| Corresponding Author | Tan, WS (reprint author), Nanjing Univ Sci & Technol, Dept Appl Phys, Nanjing 210094, Peoples R China. |
| Subtype | Article |
| Abstract | Modulation-doped Al0.22Ga0.78N/GaN heterostructure with 1000 angstrom Si-dopedn-A10.22Gao.78N barrier (n-AlGaN) were deposited on (0 0 0 1)-oriented sapphire (alpha-Al2O3) by means of atmosphere-pressure metal-organic chemical vapor deposition. The reciprocal space mappings of symmetric reflection (0 0 0 2) and asymmetric reflection (1 0 (1) over bar 4) were measured with high resolution X-ray diffraction. The results indicate that the microstructure and strain status of barrier correlate to that of the underlying i-GaN layer. The barrier holds an "abnormal" strain-relaxation status, which probably results from the internal defects of n-AlGaN and the strain relaxation status at the i-GaN/alpha-Al2O3 interfaces. The results from grazing incidence X-ray diffraction show that the strain in barrier is nonuniform, which is consistent with the results from the reciprocal space mappings. (c) 2005 Elsevier B.V. All rights reserved. |
| Keyword | AlGaN/GaN heterostructure reciprocal space mappings strain relaxation grazing incidence X-ray diffraction |
| Subject Area | Chemistry; Materials Science; Metallurgy & Metallurgical Engineering |
| DOI | 10.1016/j.jallcom.2004.11.072 |
| Indexed By | SCI |
| WOS Subject | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| WOS ID | WOS:000230067900042 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.ihep.ac.cn/handle/311005/227090 |
| Collection | 多学科研究中心 中国科学院高能物理研究所_人力资源处 |
| Recommended Citation GB/T 7714 | Tan, WS,Cai, HL,Wu, XS,et al. Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2005,397(1-2):#REF!. |
| APA | Tan, WS.,Cai, HL.,Wu, XS.,Jiang, SS.,Zheng, WL.,...&贾全杰.(2005).Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering.JOURNAL OF ALLOYS AND COMPOUNDS,397(1-2),#REF!. |
| MLA | Tan, WS,et al."Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering".JOURNAL OF ALLOYS AND COMPOUNDS 397.1-2(2005):#REF!. |
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