Hu, XJ (reprint author), Zhejiang Univ Technol, Coll Chem Engn & Mat Sci, Hangzhou, Zhejiang, Peoples R China.
Article; Proceedings Paper
Using Raman spectroscopy and positron annihilation technology (PAT). we investigate the structural properties of the codoped samples by implanting boron and oxygen ions into the intrinsic diamond films (called BO series) and by implanting oxygen ions into the diamond films doped with small amounts of boron in chemical vapor deposition (called CVDBO series). It is found that after 1000 degrees C annealing, the full width at half maximum (FWHM) value of diamond peak in Raman spectrum reduces, the amount of diamond increases above 99.6% and the stress changes from compression to tension. More important the FWHM value in CVDBO series decreases by 1.6 cm(-1) after 1000 degrees C annealing, which is larger than that in the BO series with a decrease of 0.2 cm(-1), showing that the annealing prefers to more significantly reduce the defect concentration in CVDBO series. Also, the PAT measurements indicate that the S(n) value of CVDBO series is smaller than that of BO series after 800 degrees C annealing, suggesting that CVDBO series has lower defect concentrations. It is revealed that the co-doping that implanting oxygen ions into the low concentration B-doped diamond films can give a better restoration of the damaged diamond lattice by oxygen ion implantation after high temperature annealing. The intrinsic mechanism is also discussed. (C) 2008 Elsevier B.V. All rights reserved.