Zhang, C (reprint author), Max Planck Inst Halbleiterlabor, Otto Hahn Ring 6, D-81739 Munich, Germany.
Article; Proceedings Paper
Depleted P-channel Field Effect Transistor (DEPFET) Macropixel detectors have been designed for X-ray applications and the prototypes with 1 x 1 mm(2) pixel size have been fabricated. The prototype applies a newly designed DEPFET structure with drain-clear-gate (DCG) as the readout element of a silicon drift detector. Therefore, the size of Macropixel detectors can be adjusted to match the requirement of the instrument on spatial resolution from about 50 x 50 mu m(2) to several square millimeters. The measured energy resolution for Mn-K-alpha peak at room temperature is 191 eV with a prototype single pixel. In this paper we present the DEPFET Macropixel detector concept as well as the static and dynamic test results. (c) 2006 Published by Elsevier B.V.
Zhang, C,Lechner, P,Lutz, G,et al. Development of DEPFET Macropixel detectors[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,2006,568(1):#REF!.
Zhang, C.,Lechner, P.,Lutz, G.,Porro, M.,Richter, R.,...&张双南.(2006).Development of DEPFET Macropixel detectors.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,568(1),#REF!.
Zhang, C,et al."Development of DEPFET Macropixel detectors".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 568.1(2006):#REF!.