IHEP OpenIR  > 多学科研究中心
Photoluminescence and X-ray absorption near edge structure of Eu ions doped SiO2 thin films
Liu, F; Zhu, M; Liu T(刘涛); Liu, T
2001
发表期刊MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
卷号81期号:1-3页码:#REF!
通讯作者Liu, F (reprint author), Univ Sci & Technol China, Grad Sch, POB 3908, Beijing 100039, Peoples R China.
文章类型Article; Proceedings Paper
摘要Eu doped SiO2 thin films, SiO2(Eu), were prepared by implanting Eu ions into thermal growth SiO2 thin films and co-sputtering of SiO2 and Eu2O3. The red light emission (604 nm) at room temperature from as prepared and annealed SiOz(Eu) films was observed, which is corresponding to the D-5(0)-F-7(J) transitions of Eu3+. The blue light emission (443 nm) corresponding to f-d transition of Eu2+ appeared after annealing at high temperature in N-2 accompanied by a decrease in intensity of red light. It indicates the conversion of Eu3+ to Eu2+. The Eu-L-3-edge X-ray absorption near edge structure (XANES) spectra show the doublet peak structure with energy difference of 7 eV, which confirms the conversion of Eu3+ to Eu2+ at high annealing temperature (Ta) in N-2. (C) 2001 Elsevier Science S.A. AII rights reserved.
关键词Eu ions SiO2 photoluminescence XANES
学科领域Materials Science; Physics
DOI10.1016/S0921-5107(00)00732-7
收录类别SCI
WOS类目Materials Science, Multidisciplinary ; Physics, Condensed Matter
WOS记录号WOS:000168392800047
引用统计
被引频次:4[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/226732
专题多学科研究中心
推荐引用方式
GB/T 7714
Liu, F,Zhu, M,Liu T,et al. Photoluminescence and X-ray absorption near edge structure of Eu ions doped SiO2 thin films[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2001,81(1-3):#REF!.
APA Liu, F,Zhu, M,刘涛,&Liu, T.(2001).Photoluminescence and X-ray absorption near edge structure of Eu ions doped SiO2 thin films.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,81(1-3),#REF!.
MLA Liu, F,et al."Photoluminescence and X-ray absorption near edge structure of Eu ions doped SiO2 thin films".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 81.1-3(2001):#REF!.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
1954.pdf(91KB)期刊论文作者接受稿限制开放CC BY-NC-SA请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Liu, F]的文章
[Zhu, M]的文章
[刘涛]的文章
百度学术
百度学术中相似的文章
[Liu, F]的文章
[Zhu, M]的文章
[刘涛]的文章
必应学术
必应学术中相似的文章
[Liu, F]的文章
[Zhu, M]的文章
[刘涛]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。