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Space growth studies of Ce-doped Bi12SiO20 single crystal
Zhou, YF; Wang, JC; Tang, LA; Pan, ZL; Chen, NF; Chen, WC; Huang, YY; He, W; Huang YY(黄宇营); He W(何伟)
2004
发表期刊MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
卷号113期号:3页码:#REF!
通讯作者Zhou, YF (reprint author), Chinese Acad Sci, Shanghai Inst Ceram, 1295 Dingxi Rd, Shanghai 200050, Peoples R China.
摘要Ce-doped Bi12SiO20 (BSO) single crystal was grown on board of the Chinese Spacecraft-Shenzhou No. 3. A cylindrical crystal, 10 mm in diameter and 40 mm in length, was obtained. The morphology of crystals is significantly different for ground- and space-grown portions. The space- and ground-grown crystals have been characterized by Cc concentration distribution, X-ray rocking curve absorption spectrum and micro-Raman spectrum. The results show that the quality of Ce-doped BSO crystal grown in space is more homogeneous and more perfect than that of ground grown one. (C) 2004 Published by Elsevier B.V.
文章类型Article
关键词Bridgman technique crystal growth bismuth compounds doping effects microgravity condition
学科领域Materials Science; Physics
DOI10.1016/j.mseb.2004.07.089
收录类别SCI
WOS类目Materials Science, Multidisciplinary ; Physics, Condensed Matter
WOS记录号WOS:000224946000001
引用统计
被引频次:6[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/226728
专题多学科研究中心
推荐引用方式
GB/T 7714
Zhou, YF,Wang, JC,Tang, LA,et al. Space growth studies of Ce-doped Bi12SiO20 single crystal[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2004,113(3):#REF!.
APA Zhou, YF.,Wang, JC.,Tang, LA.,Pan, ZL.,Chen, NF.,...&何伟.(2004).Space growth studies of Ce-doped Bi12SiO20 single crystal.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,113(3),#REF!.
MLA Zhou, YF,et al."Space growth studies of Ce-doped Bi12SiO20 single crystal".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 113.3(2004):#REF!.
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