Space growth studies of Ce-doped Bi12SiO20 single crystal
Zhou, YF; Wang, JC; Tang, LA; Pan, ZL; Chen, NF; Chen, WC; Huang, YY; He, W; Huang YY(黄宇营); He W(何伟)
刊名MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
2004
卷号113期号:3页码:#REF!
关键词Bridgman technique crystal growth bismuth compounds doping effects microgravity condition
学科分类Materials Science; Physics
DOI10.1016/j.mseb.2004.07.089
通讯作者Zhou, YF (reprint author), Chinese Acad Sci, Shanghai Inst Ceram, 1295 Dingxi Rd, Shanghai 200050, Peoples R China.
文章类型Article
英文摘要Ce-doped Bi12SiO20 (BSO) single crystal was grown on board of the Chinese Spacecraft-Shenzhou No. 3. A cylindrical crystal, 10 mm in diameter and 40 mm in length, was obtained. The morphology of crystals is significantly different for ground- and space-grown portions. The space- and ground-grown crystals have been characterized by Cc concentration distribution, X-ray rocking curve absorption spectrum and micro-Raman spectrum. The results show that the quality of Ce-doped BSO crystal grown in space is more homogeneous and more perfect than that of ground grown one. (C) 2004 Published by Elsevier B.V.
类目[WOS]Materials Science, Multidisciplinary ; Physics, Condensed Matter
收录类别SCI
WOS记录号WOS:000224946000001
引用统计
被引频次:6[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/226728
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
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GB/T 7714
Zhou, YF,Wang, JC,Tang, LA,et al. Space growth studies of Ce-doped Bi12SiO20 single crystal[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2004,113(3):#REF!.
APA Zhou, YF.,Wang, JC.,Tang, LA.,Pan, ZL.,Chen, NF.,...&何伟.(2004).Space growth studies of Ce-doped Bi12SiO20 single crystal.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,113(3),#REF!.
MLA Zhou, YF,et al."Space growth studies of Ce-doped Bi12SiO20 single crystal".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 113.3(2004):#REF!.
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