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Identification of pore size in porous SiO2 thin film by positron annihilation
Zhang Z(张哲); Qin XB(秦秀波); Wang DN(王丹妮); Yu RS(于润升); Wang QZ(王巧占); Wang BY(王宝义); Zhang, Z; Qin, XB; Wang, DN; Yu, RS; Wang, QZ; Ma, YY; Wang, BY
2009
发表期刊CHINESE PHYSICS C
卷号33期号:2页码:#REF!
通讯作者Wang, BY (reprint author), CAS, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China.
文章类型Article
摘要Positron annihilation lifetime and Doppler broadening of annihilation line techniques have been used to obtain information about the small pore structure and size of porous SiO2 thin film produced by sputtered Al-Si thin film and etched Al-Si thin film. The film is prepared by an Al/Si 75:25 at.-% (Al75Si25) target with the radiofrequency (RF) power of 66 W at room temperature. A 5 wt.-% phosphoric acid solution is used to etch the Al cylinders. All the Al cylinders dissolved in the solution after 15 h at room temperature, and the sample is subsequently rinsed in pure water. In this way, the porous SiO2 on the Si substrate is produced. From our results, the values of all lifetime components in the spectra of Al-Si thin film are less than 1 ns, but the value of one of the lifetime components in the spectra of porous SiO2 thin film is tau = 7.80 ns. with these values of lifetime, RTE (Rectangular Pore Extension) model has been used to analyze the pore size.
关键词Al-Si thin film porous SiO2 thin film positron annihilation
学科领域Physics
收录类别SCI
WOS类目Physics, Nuclear ; Physics, Particles & Fields
WOS记录号WOS:000263137700015
引用统计
被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/226565
专题多学科研究中心
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GB/T 7714
Zhang Z,Qin XB,Wang DN,et al. Identification of pore size in porous SiO2 thin film by positron annihilation[J]. CHINESE PHYSICS C,2009,33(2):#REF!.
APA 张哲.,秦秀波.,王丹妮.,于润升.,王巧占.,...&Wang, BY.(2009).Identification of pore size in porous SiO2 thin film by positron annihilation.CHINESE PHYSICS C,33(2),#REF!.
MLA 张哲,et al."Identification of pore size in porous SiO2 thin film by positron annihilation".CHINESE PHYSICS C 33.2(2009):#REF!.
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