Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition
Chen, ZT; Xu, K; Guo, LP; Yang, ZJ; Su, YY; Yang, XL; Pan, YB; Shen, B; Zhang, H; Zhang, GY
刊名JOURNAL OF CRYSTAL GROWTH
2006
卷号294期号:2页码:#REF!
关键词rocking curve stresses threading dislocation GaN thin films
学科分类Crystallography; Materials Science; Physics
DOI10.1016/j.jcrysgro.2006.05.085
通讯作者Zhang, GY (reprint author), Peking Univ, Sch Phys, Beijing 100871, Peoples R China.
文章类型Article
英文摘要Effect of long anneals on densities of different types of threading dislocations (TDs) in GaN films grown onto sapphire substrate by metal-organic chemical vapor deposition was investigated by high-resolution X-ray diffraction. The results showed that the densities of both types of TDs changed obviously but oppositely, and residual stress in the GaN films was relaxed by generating edge-type TDs instead of screw-type TDs. The results obtained from chemical etching experiments and grazing-incidence X-ray diffraction (GIXRD) also supported the proposed defect structure evolution. (c) 2006 Elsevier B.V. All rights reserved.
类目[WOS]Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
收录类别SCI
WOS记录号WOS:000240707800002
引用统计
被引频次:14[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/226563
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
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Chen, ZT,Xu, K,Guo, LP,et al. Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition[J]. JOURNAL OF CRYSTAL GROWTH,2006,294(2):#REF!.
APA Chen, ZT.,Xu, K.,Guo, LP.,Yang, ZJ.,Su, YY.,...&Zhang, GY.(2006).Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition.JOURNAL OF CRYSTAL GROWTH,294(2),#REF!.
MLA Chen, ZT,et al."Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition".JOURNAL OF CRYSTAL GROWTH 294.2(2006):#REF!.
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