Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD
Zheng, XH; Feng, ZH; Wang, YT; Zheng, WL; Jia, QJ; Jiang, XM; Yang, H; Liang, JW; Zheng WL(郑文莉); Jia QJ(贾全杰); Jiang XM(姜晓明)
刊名JOURNAL OF CRYSTAL GROWTH
2002
卷号242期号:1-2页码:#REF!
关键词nucleation layers X-ray diffraction metalorganic chemical vapor deposition gallium compounds nitrides
学科分类Crystallography; Materials Science; Physics
DOI10.1016/S0022-0248(02)01391-X
通讯作者Zheng, XH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
文章类型Article
英文摘要The structural characteristic of cubic GaN (C-GaN) nucleation layers on GaAs(0 0 1) substrates by metalorganic chemical vapor deposition was in detail investigated first by X-ray diffraction (XRD) measurements, using a Huber five-circle diffractometer and an intense synchrotron X-ray source. The XRD results indicate that the C-GaN nucleation layers are highly crystallized. Phi scans and pole figures of the (1 1 1) reflections give a convincing proof that the GaN nucleation layers show exactly cubic symmetrical structure. The GaN(1 1 1) reflections at 54.74degrees in chi are a measurable component, however (002) components parallel to the substrate surface are not detected. Possible explanations are suggested. The pole figures of {1 0 (1) over bar 0} reflections from H-GaN inclusions show that the parasitic H-GaN originates from the C-GaN nucleation layers. The coherence lengths along the close-packed [1 1 1] directions estimated from the (1 1 1) peaks are nanometer order of magnitude. (C) 2002 Elsevier Science B.V. All rights reserved.
类目[WOS]Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
收录类别SCI
WOS记录号WOS:000176729400018
引用统计
被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/226326
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
中国科学院高能物理研究所_人力资源处
推荐引用方式
GB/T 7714
Zheng, XH,Feng, ZH,Wang, YT,et al. Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD[J]. JOURNAL OF CRYSTAL GROWTH,2002,242(1-2):#REF!.
APA Zheng, XH.,Feng, ZH.,Wang, YT.,Zheng, WL.,Jia, QJ.,...&姜晓明.(2002).Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD.JOURNAL OF CRYSTAL GROWTH,242(1-2),#REF!.
MLA Zheng, XH,et al."Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD".JOURNAL OF CRYSTAL GROWTH 242.1-2(2002):#REF!.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
1398.pdf(122KB)期刊论文作者接受稿开放获取CC BY-NC-SA浏览 请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Zheng, XH]的文章
[Feng, ZH]的文章
[Wang, YT]的文章
百度学术
百度学术中相似的文章
[Zheng, XH]的文章
[Feng, ZH]的文章
[Wang, YT]的文章
必应学术
必应学术中相似的文章
[Zheng, XH]的文章
[Feng, ZH]的文章
[Wang, YT]的文章
相关权益政策
暂无数据
收藏/分享
文件名: 1398.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。