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X-ray lithography technology for the fabrication of deep-submicron T-shaped gate
其他题名制作深亚微米T型栅的X射线技术
Xie, CQ; Chen, DP; Li, B; Wang, DQ; Ye, TC; Peng, LQ; Yi, F; Han, Y; Zhanng, JF; Peng LQ(彭良强); Yi FT(伊福廷); Han Y(韩勇); Zhang JF(张菊芳)
2003
发表期刊HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
卷号27页码:#REF!
通讯作者Xie, CQ (reprint author), CAS, Microelect R&D Ctr, Beijing 100029, Peoples R China.
摘要Because of its validity in reducing transistor noise due to gate parasitic resistance T-shaped structure has been applied for the fabrication of Pseudomorphic High Electron Mobility Transistor (PHEMT) device widely, X-ray lithography is the best way to fabricate deep-submicron T-shaped structure, because it has many advantages, such as large process latitude,high throughput, extremely long depth of focus,large exposure field sizes, low cost,and so on, and the more important thing is that X-ray lithography technology is relatively mature. In this paper, the home-made X-ray mask process is introduced first, and the influence of blur to the light intensity distribution on the surface of X-ray resist is analyzed, the three layer resist method which is used for the fabrication of deep -submicron T-shaped structure and the 75nm T-shaped structure result which was achieved in BSRF 3B1A beamline are presented lastly.
文章类型Article
关键词X-ray lithography X-ray mask deep-submicron T-shaped gate blur
学科领域Physics
收录类别SCI
WOS类目Physics, Nuclear ; Physics, Particles & Fields
WOS记录号WOS:000220592300027
引用统计
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/226281
专题多学科研究中心
推荐引用方式
GB/T 7714
Xie, CQ,Chen, DP,Li, B,et al. X-ray lithography technology for the fabrication of deep-submicron T-shaped gate[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2003,27:#REF!.
APA Xie, CQ.,Chen, DP.,Li, B.,Wang, DQ.,Ye, TC.,...&张菊芳.(2003).X-ray lithography technology for the fabrication of deep-submicron T-shaped gate.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,27,#REF!.
MLA Xie, CQ,et al."X-ray lithography technology for the fabrication of deep-submicron T-shaped gate".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 27(2003):#REF!.
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