Surfactant influence on the Ge heteroepilayer on Si(0 0 1) studied by X-ray diffraction and atomic force microscopy
Zhu, HJ; Jiang, ZM; Xu, AM; Mao, MC; Hu, DZ; Zhang, ZJ; Liu, KH; Huang, DM; Wang, X; Sun, JL; Li, MQ; Jiang, XM; Jiang XM(姜晓明)
刊名JOURNAL OF CRYSTAL GROWTH
1997
卷号179期号:1-2页码:#REF!
学科分类Crystallography; Materials Science; Physics
DOI10.1016/S0022-0248(97)00099-7
通讯作者Zhu, HJ (reprint author), FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA.
文章类型Article
英文摘要X-ray diffraction and atomic force microscope were used to investigate the effect of Sb atoms as a surfactant on the morphology and strain relaxation of 6 nm-thick Ge epilayers grown on Si(0 0 1). Without Sb atoms, Ge atoms accumulate and form fully relaxed islands. With the presence of Sb atoms, the Ge epilayer is smooth with a roughness of 0.28 nm and partially relaxed.
类目[WOS]Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
收录类别SCI
WOS记录号WOS:A1997XN90200016
引用统计
被引频次:4[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/226257
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
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GB/T 7714
Zhu, HJ,Jiang, ZM,Xu, AM,et al. Surfactant influence on the Ge heteroepilayer on Si(0 0 1) studied by X-ray diffraction and atomic force microscopy[J]. JOURNAL OF CRYSTAL GROWTH,1997,179(1-2):#REF!.
APA Zhu, HJ.,Jiang, ZM.,Xu, AM.,Mao, MC.,Hu, DZ.,...&姜晓明.(1997).Surfactant influence on the Ge heteroepilayer on Si(0 0 1) studied by X-ray diffraction and atomic force microscopy.JOURNAL OF CRYSTAL GROWTH,179(1-2),#REF!.
MLA Zhu, HJ,et al."Surfactant influence on the Ge heteroepilayer on Si(0 0 1) studied by X-ray diffraction and atomic force microscopy".JOURNAL OF CRYSTAL GROWTH 179.1-2(1997):#REF!.
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