Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)
Xu, M; Liu, CX; Liu, HF; Luo, GM; Chen, XM; Yu, WX; Cui, SF; Li, JH; Chen, H; Mai, ZH; Zhou, JM; Jia, QJ; Zheng, WL; Jia QJ(贾全杰); Zheng WL(郑文莉); Chen ZJ(陈中军)
刊名PHYSICS LETTERS A
2002
卷号299期号:1页码:#REF!
学科分类Physics
DOI10.1016/S0375-9601(02)00619-9
通讯作者Xu, M (reprint author), Univ Montana, Inst Phys, A-8700 Leoben, Austria.
文章类型Article
英文摘要The thermal stability of cubic-phase GaN (c-GaN) film grown by molecular-beam epitaxy was investigated by Raman scattering spectroscopy and X-ray scattering. The results of Raman scattering shows that, after annealing at 1000degreesC, the intensity of transverse (TO) and longitudinal (LO) optical peaks from cubic phase obviously decreases while the intensity of TOb peak from the boundary effect slightly decreases, but the transformation of the hexagonal phase (alpha-GaN) can not be detected due to a little of alpha-GaN inclusion. X-ray reflectivity measurements indicate that there is a high-electron-density layer between the substrate and the GaN film, and it becomes uniform and much thinner after high-temperature annealing, counting for the Raman results of the intensity change of the TOb peak. The results of high-angle X-ray diffraction and X-ray reciprocal space mapping revealed that the relative content of alpha-GaN obviously increases after annealing at 1000degreesC, and (10 (1) over bar1) is the most stable diffraction lattice of the alpha-GaN hexagonal phase. (C) 2002 Elsevier Science B.V. All rights reserved.
类目[WOS]Physics, Multidisciplinary
收录类别SCI
WOS记录号WOS:000176725600012
引用统计
被引频次:5[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/225998
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
中国科学院高能物理研究所_人力资源处
推荐引用方式
GB/T 7714
Xu, M,Liu, CX,Liu, HF,et al. Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)[J]. PHYSICS LETTERS A,2002,299(1):#REF!.
APA Xu, M.,Liu, CX.,Liu, HF.,Luo, GM.,Chen, XM.,...&陈中军.(2002).Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001).PHYSICS LETTERS A,299(1),#REF!.
MLA Xu, M,et al."Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)".PHYSICS LETTERS A 299.1(2002):#REF!.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
963.pdf(116KB)期刊论文作者接受稿开放获取CC BY-NC-SA浏览 请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Xu, M]的文章
[Liu, CX]的文章
[Liu, HF]的文章
百度学术
百度学术中相似的文章
[Xu, M]的文章
[Liu, CX]的文章
[Liu, HF]的文章
必应学术
必应学术中相似的文章
[Xu, M]的文章
[Liu, CX]的文章
[Liu, HF]的文章
相关权益政策
暂无数据
收藏/分享
文件名: 963.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。