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New type X-ray mask fabricated using inductively coupled plasma deepetching
Chen, D; Lei, W; Wang, S; Li, C; Guo, X; Mao, H; Zhang, D; Yi, F; Yi FT(伊福廷)
2001
发表期刊MICROSYSTEM TECHNOLOGIES
卷号7期号:2页码:#REF!
通讯作者Chen, D (reprint author), Shanghai Jiao Tong Univ, Res Inst Micronanometer Sci & Technol, State Key Lab Micronano Fabricat Technol, Shanghai 200030, Peoples R China.
文章类型Article
摘要The fabrication of X-ray masks is a critical and challenging process in LIGA technique. As inductively coupled plasma (ICP) deepetching appears to be the most suitable source for deep silicon etching, we fabricated a new type X-ray mask using this technique. In comparison with other types of X-ray masks, the mask we fabricated has the advantages of its low cost and its simple fabrication process. Desired microstructures have also been fabricated using this new type X-ray mask in LIGA technique.
学科领域Engineering; Science & Technology - Other Topics; Materials Science; Physics
DOI10.1007/s005420000073
收录类别SCI
WOS类目Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号WOS:000168928100004
引用统计
被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/225933
专题多学科研究中心
推荐引用方式
GB/T 7714
Chen, D,Lei, W,Wang, S,et al. New type X-ray mask fabricated using inductively coupled plasma deepetching[J]. MICROSYSTEM TECHNOLOGIES,2001,7(2):#REF!.
APA Chen, D.,Lei, W.,Wang, S.,Li, C.,Guo, X.,...&伊福廷.(2001).New type X-ray mask fabricated using inductively coupled plasma deepetching.MICROSYSTEM TECHNOLOGIES,7(2),#REF!.
MLA Chen, D,et al."New type X-ray mask fabricated using inductively coupled plasma deepetching".MICROSYSTEM TECHNOLOGIES 7.2(2001):#REF!.
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