p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy
Tang J(唐军); Tang, J; Kumashiro, R; Ju, J; Li, ZF; Avila, MA; Suekuni, K; Takabatake, T; Guo, F; Kobayashi, K; Tanigaki, K
刊名CHEMICAL PHYSICS LETTERS
2009
卷号472期号:1-3页码:#REF!
学科分类Chemistry; Physics
DOI10.1016/j.cplett.2009.02.061
通讯作者Tang, J (reprint author), Tohoku Univ, Dept Phys, Grad Sch Sci, 6-3 Aoba, Sendai, Miyagi 9808578, Japan.
文章类型Article
英文摘要The electronic properties of p- and n-type Ba8Ga16Ge30 (BGG) are studied using soft X-ray photoelectron spectroscopy at a high-energy facility. Three bands are resolved in the valence band region. The first band for n-type BGG is sensitive to temperature, while the second band is sensitive for p- type BGG. The change in the ratio of Ba to Ga, from which the carrier type is controlled in this system, modifies the positions of Ga residing at the larger (Ga-CGe)(24) cage. This modi. cation in the host network is responsible for the large differences observed in electronic properties of p- and n-BGGs in this clathrate family. (C) 2009 Elsevier B. V. All rights reserved.
类目[WOS]Chemistry, Physical ; Physics, Atomic, Molecular & Chemical
收录类别SCI
WOS记录号WOS:000264637800011
引用统计
被引频次:13[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/225826
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
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Tang J,Tang, J,Kumashiro, R,et al. p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy[J]. CHEMICAL PHYSICS LETTERS,2009,472(1-3):#REF!.
APA 唐军.,Tang, J.,Kumashiro, R.,Ju, J.,Li, ZF.,...&Tanigaki, K.(2009).p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy.CHEMICAL PHYSICS LETTERS,472(1-3),#REF!.
MLA 唐军,et al."p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy".CHEMICAL PHYSICS LETTERS 472.1-3(2009):#REF!.
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