Investigation of phosphorus surface segregation by X-ray scattering measurements
Qin, J; Xue, F; Huang, L; Fan, YL; Yang, XJ; Jiang, ZM; Jia, QJ; Jiang, XM; Jia QJ(贾全杰); Jiang XM(姜晓明)
刊名SURFACE SCIENCE
2005
卷号580期号:1-3页码:#REF!
关键词molecular beam epitaxy (MBE) surface segregation phosphorus silicon X-ray scattering diffraction, and reflection
学科分类Chemistry; Physics
DOI10.1016/j.susc.2005.02.002
通讯作者Jiang, ZM (reprint author), Fudan Univ, Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China.
文章类型Article
英文摘要The surface segregation of phosphorus in silicon at low temperatures is studied by using delta doping structures grown by molecular beam epitaxy. The samples are characterized by X-ray crystal truncation rod (CTR) scattering using synchrotron radiation as the light source. The l/e decay length of P segregation and segregation barrier energy are obtained by fitting the CTR curves within kinematical approximation of X-ray diffraction theory. The surface segregation of P is strong at a growth temperature of 450 degrees C, with a l/e decay length of 14 nm, while for growth temperatures below 350 degrees C, P segregation is negligible with a l/e decay length not larger than 4 nm. The segregation barrier energy is determined to be 0.43 eV. (c) 2005 Elsevier B.V. All rights reserved.
类目[WOS]Chemistry, Physical ; Physics, Condensed Matter
收录类别SCI
WOS记录号WOS:000228544100007
引用统计
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/225764
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
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Qin, J,Xue, F,Huang, L,et al. Investigation of phosphorus surface segregation by X-ray scattering measurements[J]. SURFACE SCIENCE,2005,580(1-3):#REF!.
APA Qin, J.,Xue, F.,Huang, L.,Fan, YL.,Yang, XJ.,...&姜晓明.(2005).Investigation of phosphorus surface segregation by X-ray scattering measurements.SURFACE SCIENCE,580(1-3),#REF!.
MLA Qin, J,et al."Investigation of phosphorus surface segregation by X-ray scattering measurements".SURFACE SCIENCE 580.1-3(2005):#REF!.
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