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Study of Si caplayer influence on microstructure of Ge/Si quantum dots by grazing incident X-ray diffraction
其他题名掠入射X射线衍射研究Si覆盖层对Ge/Si量子点微结构的影响
He Q(何庆); Jia QJ(贾全杰); Jiang XM(姜晓明); He, Q; Jia, QJ; Jiang, XM; Cui, J; Jiang, ZM
2003
发表期刊HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
卷号27页码:#REF!
通讯作者He, Q (reprint author), Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China.
摘要The microstructure and morphology of Ge quantum dots grown on Si(001) with varied coverage of Si caplayer has been studied by grazing incident diffraction ( GID) and atomic force microscope ( AFM) respectively. It is found that the composition as well as the morphology varies obviously with small change of coverage of Si caplayer.
文章类型Article
关键词quantum dots composition strain GID
学科领域Physics
收录类别SCI
WOS类目Physics, Nuclear ; Physics, Particles & Fields
WOS记录号WOS:000220592300012
引用统计
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/225741
专题多学科研究中心
推荐引用方式
GB/T 7714
He Q,Jia QJ,Jiang XM,et al. Study of Si caplayer influence on microstructure of Ge/Si quantum dots by grazing incident X-ray diffraction[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2003,27:#REF!.
APA 何庆.,贾全杰.,姜晓明.,He, Q.,Jia, QJ.,...&Jiang, ZM.(2003).Study of Si caplayer influence on microstructure of Ge/Si quantum dots by grazing incident X-ray diffraction.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,27,#REF!.
MLA 何庆,et al."Study of Si caplayer influence on microstructure of Ge/Si quantum dots by grazing incident X-ray diffraction".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 27(2003):#REF!.
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