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Effects of growth temperature of si buffer layer on structure and composition in GeSi epitaxy layers on Si wafer
Alternative TitleSi缓冲层的生长温度对SiGe组分、结构的影响
Wu, XS; Cai, HL; Tan, WS; Zhai, ZY; Wu, ZH; Jia, QJ; Cheng, HH; Jiang, SS; Wu ZH(吴忠华); Jia QJ(贾全杰)
2005
Source PublicationHIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
Volume29Pages:#REF!
Corresponding AuthorWu, XS (reprint author), Nanjing Univ, Dept Phys, Solid State Microstruct Lab, Ctr Adv Studies Sci & Technol Microstruct, Nanjing 210093, Peoples R China.
SubtypeArticle
AbstractThis study systematically addresses the effect of temperature on the growth of SiGe compliant substrates. The characteristics of the films were experimentally determined by various techniques, including high resolution X-ray diffraction (HRXRD), surface diffraction, X-ray reflectivity with synchrotron radiation, transmission electron microscopy (TEM) and atomic force microscopy (AFM). In the growth temperature range from 350-600 degrees C, X-ray diffraction shows that the film was strain relaxed with a Ge content of 32 +/- 2%, and TEM indicates that the film is free from dislocations in the temperature range, 400-500 degrees C. AFM reveals that the optimal temperature for the growth is 450 degrees C, with a root mean squared surface roughness of 15 angstrom.
Keywordhigh resolution X-ray diffraction with synchrotron radiation buffer layer grown at low temperature grown temperature
Subject AreaPhysics
Indexed BySCI
WOS SubjectPhysics, Nuclear ; Physics, Particles & Fields
WOS IDWOS:000234206900007
Citation statistics
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/225569
Collection多学科研究中心
Recommended Citation
GB/T 7714
Wu, XS,Cai, HL,Tan, WS,et al. Effects of growth temperature of si buffer layer on structure and composition in GeSi epitaxy layers on Si wafer[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2005,29:#REF!.
APA Wu, XS.,Cai, HL.,Tan, WS.,Zhai, ZY.,Wu, ZH.,...&贾全杰.(2005).Effects of growth temperature of si buffer layer on structure and composition in GeSi epitaxy layers on Si wafer.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,29,#REF!.
MLA Wu, XS,et al."Effects of growth temperature of si buffer layer on structure and composition in GeSi epitaxy layers on Si wafer".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 29(2005):#REF!.
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