IHEP OpenIR  > 多学科研究中心
Effects of growth temperature of si buffer layer on structure and composition in GeSi epitaxy layers on Si wafer
其他题名Si缓冲层的生长温度对SiGe组分、结构的影响
Wu, XS; Cai, HL; Tan, WS; Zhai, ZY; Wu, ZH; Jia, QJ; Cheng, HH; Jiang, SS; Wu ZH(吴忠华); Jia QJ(贾全杰)
2005
发表期刊HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
卷号29页码:#REF!
通讯作者Wu, XS (reprint author), Nanjing Univ, Dept Phys, Solid State Microstruct Lab, Ctr Adv Studies Sci & Technol Microstruct, Nanjing 210093, Peoples R China.
文章类型Article
摘要This study systematically addresses the effect of temperature on the growth of SiGe compliant substrates. The characteristics of the films were experimentally determined by various techniques, including high resolution X-ray diffraction (HRXRD), surface diffraction, X-ray reflectivity with synchrotron radiation, transmission electron microscopy (TEM) and atomic force microscopy (AFM). In the growth temperature range from 350-600 degrees C, X-ray diffraction shows that the film was strain relaxed with a Ge content of 32 +/- 2%, and TEM indicates that the film is free from dislocations in the temperature range, 400-500 degrees C. AFM reveals that the optimal temperature for the growth is 450 degrees C, with a root mean squared surface roughness of 15 angstrom.
关键词high resolution X-ray diffraction with synchrotron radiation buffer layer grown at low temperature grown temperature
学科领域Physics
收录类别SCI
WOS类目Physics, Nuclear ; Physics, Particles & Fields
WOS记录号WOS:000234206900007
引用统计
被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/225569
专题多学科研究中心
推荐引用方式
GB/T 7714
Wu, XS,Cai, HL,Tan, WS,et al. Effects of growth temperature of si buffer layer on structure and composition in GeSi epitaxy layers on Si wafer[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2005,29:#REF!.
APA Wu, XS.,Cai, HL.,Tan, WS.,Zhai, ZY.,Wu, ZH.,...&贾全杰.(2005).Effects of growth temperature of si buffer layer on structure and composition in GeSi epitaxy layers on Si wafer.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,29,#REF!.
MLA Wu, XS,et al."Effects of growth temperature of si buffer layer on structure and composition in GeSi epitaxy layers on Si wafer".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 29(2005):#REF!.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
313.pdf(855KB)期刊论文作者接受稿限制开放CC BY-NC-SA请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Wu, XS]的文章
[Cai, HL]的文章
[Tan, WS]的文章
百度学术
百度学术中相似的文章
[Wu, XS]的文章
[Cai, HL]的文章
[Tan, WS]的文章
必应学术
必应学术中相似的文章
[Wu, XS]的文章
[Cai, HL]的文章
[Tan, WS]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。