Effects of growth temperature of si buffer layer on structure and composition in GeSi epitaxy layers on Si wafer
Wu, XS; Cai, HL; Tan, WS; Zhai, ZY; Wu, ZH; Jia, QJ; Cheng, HH; Jiang, SS; Wu ZH(吴忠华); Jia QJ(贾全杰)
刊名HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
2005
卷号29页码:#REF!
关键词high resolution X-ray diffraction with synchrotron radiation buffer layer grown at low temperature grown temperature
学科分类Physics
其他题名Si缓冲层的生长温度对SiGe组分、结构的影响
通讯作者Wu, XS (reprint author), Nanjing Univ, Dept Phys, Solid State Microstruct Lab, Ctr Adv Studies Sci & Technol Microstruct, Nanjing 210093, Peoples R China.
文章类型Article
英文摘要This study systematically addresses the effect of temperature on the growth of SiGe compliant substrates. The characteristics of the films were experimentally determined by various techniques, including high resolution X-ray diffraction (HRXRD), surface diffraction, X-ray reflectivity with synchrotron radiation, transmission electron microscopy (TEM) and atomic force microscopy (AFM). In the growth temperature range from 350-600 degrees C, X-ray diffraction shows that the film was strain relaxed with a Ge content of 32 +/- 2%, and TEM indicates that the film is free from dislocations in the temperature range, 400-500 degrees C. AFM reveals that the optimal temperature for the growth is 450 degrees C, with a root mean squared surface roughness of 15 angstrom.
类目[WOS]Physics, Nuclear ; Physics, Particles & Fields
收录类别SCI
WOS记录号WOS:000234206900007
引用统计
被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/225569
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
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Wu, XS,Cai, HL,Tan, WS,et al. Effects of growth temperature of si buffer layer on structure and composition in GeSi epitaxy layers on Si wafer[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2005,29:#REF!.
APA Wu, XS.,Cai, HL.,Tan, WS.,Zhai, ZY.,Wu, ZH.,...&贾全杰.(2005).Effects of growth temperature of si buffer layer on structure and composition in GeSi epitaxy layers on Si wafer.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,29,#REF!.
MLA Wu, XS,et al."Effects of growth temperature of si buffer layer on structure and composition in GeSi epitaxy layers on Si wafer".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 29(2005):#REF!.
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